Paper Abstract and Keywords |
Presentation |
2005-04-14 16:15
4Gb Multilevel AG-AND Flash Memory with 10MB/s Programming Throughput Hideaki Kurata, Yoshitaka Sasago, Kazuo Otsuga, Tsuyoshi Arigane, Tetsufumi Kawamura, Takashi Kobayashi, Hitoshi Kume (Hitachi), Kazuki Homma, Kenji Kozakai, Satoshi Noda, Teruhiko Ito, Masahiro Shimizu, Yoshihiro Ikeda, Osamu Tsuchiya, Kazunori Furusawa (RENESAS) Link to ES Tech. Rep. Archives: ICD2005-11 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We fabricated a 4Gb multilevel AG-AND flash memory using 90nm CMOS technology. By using an inversion-layer local-bitline technology, the bit-line pitch is reduced to 2 F, resulting in a 126 mm2 chip size and a 0.0162um2/bit cell size. To achieve 2-bits/cell, we have to precisely control the large resistance of the inversion-layer bit-line. In reading operations, two compensation methods, the address compensation and temperature compensation methods, were applied. In programming operations, charge-sharing scheme suppresses the difference in programming speeds along the string and self-boosting scheme reduces the time overhead of pre-charging bitlines. With these two schemes, a high programming throughput of 10 MB/s is achieved, even in multilevel flash memory. We have also provided a cache-read function to achieve a high access throughput of 22 MB/s. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
multilevel / flash memory / AG-AND-type / inversion-layer bit-line / self-boosting / charge-sharing / temperature conmensation / address compensation |
Reference Info. |
IEICE Tech. Rep., vol. 105, no. 1, ICD2005-11, pp. 53-58, April 2005. |
Paper # |
ICD2005-11 |
Date of Issue |
2005-04-07 (ICD) |
ISSN |
Print edition: ISSN 0913-5685 |
Copyright and reproduction |
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