Paper Abstract and Keywords |
Presentation |
2006-03-03 13:00
0.4 V, 5.6 mW InP HEMT V-band Low-Noise Amplifier MMIC Kenjiro Nishikawa, Takatomo Enoki, Suehiro Sugitani, Ichihiko Toyoda (NTT) Link to ES Tech. Rep. Archives: MW2005-180 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
This paper demonstrates the low-power operation of an InP HEMT 60-GHz band low-noise amplifier (LNA) MMIC. The device used here is a commercial 0.1 um InP HEMT developed for high-speed digital ICs. The fabricated two-stage LNA MMIC, chip size of 0.9 mm^2, employs two 50 um gate-width InP HEMTs and coplanar waveguides. Under 0.4 V supply voltage operation, the MMIC achieves a noise figure of 2.86 dB at 60 GHz with an associated gain of 12.3 dB. The power dissipation of the MMIC was only 5.6 mW. The input IP3 was -9 dBm at 60 GHz. A 3-dB bandwidth of 44.6 GHz to 67.2 GHz was also achieved. These results indicate the InP HEMT technology has a great potential for the low-voltage and low-power ICs that are required for future millimeter-wave high-speed wireless applications. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
low-power consumption / low-noise amplifier / coplanar MMIC / InP HEMT / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 105, no. 626, MW2005-180, pp. 13-18, March 2006. |
Paper # |
MW2005-180 |
Date of Issue |
2006-02-24 (MW) |
ISSN |
Print edition: ISSN 0913-5685 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
Link to ES Tech. Rep. Archives: MW2005-180 |
Conference Information |
Committee |
RCS AP WBS SR MW MoNA |
Conference Date |
2006-03-01 - 2006-03-03 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
YRP |
Topics (in Japanese) |
(See Japanese page) |
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Paper Information |
Registration To |
MW |
Conference Code |
2006-03-RCS-AP-WBS-SR-MW-MoMuC |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
0.4 V, 5.6 mW InP HEMT V-band Low-Noise Amplifier MMIC |
Sub Title (in English) |
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Keyword(1) |
low-power consumption |
Keyword(2) |
low-noise amplifier |
Keyword(3) |
coplanar MMIC |
Keyword(4) |
InP HEMT |
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1st Author's Name |
Kenjiro Nishikawa |
1st Author's Affiliation |
NTT Corporation (NTT) |
2nd Author's Name |
Takatomo Enoki |
2nd Author's Affiliation |
NTT Corporation (NTT) |
3rd Author's Name |
Suehiro Sugitani |
3rd Author's Affiliation |
NTT Corporation (NTT) |
4th Author's Name |
Ichihiko Toyoda |
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NTT Corporation (NTT) |
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Speaker |
Author-4 |
Date Time |
2006-03-03 13:00:00 |
Presentation Time |
20 minutes |
Registration for |
MW |
Paper # |
MW2005-180 |
Volume (vol) |
vol.105 |
Number (no) |
no.626 |
Page |
pp.13-18 |
#Pages |
6 |
Date of Issue |
2006-02-24 (MW) |
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