| Paper Abstract and Keywords |
| Presentation |
2006-06-21 14:30
Local carrier trapping and their detrapping process at constant voltage stress in La2O3-Al2O3 composite films
Toshifumi Sago, Akiyoshi Seko, Mitsuo Sakashita, Akira Sakai, Masaki Ogawa, Shigeaki Zaima (Nagoya Univ.) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
We observed changes in local leakage currents in La2O3-Al2O3 composite films under constant voltage stress using conductive atomic force microscopy(C-AFM) to clarify a local charge trapping and detrapping process. Moreover, by comparing the current leakage properties obtained from between MOS capacitor measurements and C-AFM observations, the correlation between the local trapped charges and the device properties are revealed. Increase in density of leakage spots and its area are found in the current images obtained from the repeated C-AFM observations at the same area under high substrate voltage where the Fowler-Nordheim tunneling current becomes dominant. This is probably attributed to the local positive feedback process which is the repetition of the increase in current caused by the enhanced electric field due to the trapped holes and further the hole trapping. On the other hand, decrease in the current due to trapped electrons is observed at the area other than the leakage spot sites. Additionally, it is revealed that the trapped hole is more easily detrapped than the electron. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
La2O3-Al2O3 composite film / high-k gate dielectric film / conductive atomic force microscopy / charge trapping site / / / / |
| Reference Info. |
IEICE Tech. Rep., vol. 106, no. 108, SDM2006-45, pp. 19-24, June 2006. |
| Paper # |
SDM2006-45 |
| Date of Issue |
2006-06-14 (SDM) |
| ISSN |
Print edition: ISSN 0913-5685 |
| Download PDF |
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| Conference Information |
| Committee |
SDM |
| Conference Date |
2006-06-21 - 2006-06-22 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
Faculty Club, Hiroshima Univ. |
| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
Science and Technologies of Dielectric Thin Films for Future Electron Devices |
| Paper Information |
| Registration To |
SDM |
| Conference Code |
2006-06-SDM |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
Local carrier trapping and their detrapping process at constant voltage stress in La2O3-Al2O3 composite films |
| Sub Title (in English) |
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| Keyword(1) |
La2O3-Al2O3 composite film |
| Keyword(2) |
high-k gate dielectric film |
| Keyword(3) |
conductive atomic force microscopy |
| Keyword(4) |
charge trapping site |
| Keyword(5) |
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| Keyword(6) |
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| Keyword(7) |
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| 1st Author's Name |
Toshifumi Sago |
| 1st Author's Affiliation |
Nagoya University (Nagoya Univ.) |
| 2nd Author's Name |
Akiyoshi Seko |
| 2nd Author's Affiliation |
Nagoya University (Nagoya Univ.) |
| 3rd Author's Name |
Mitsuo Sakashita |
| 3rd Author's Affiliation |
Nagoya University (Nagoya Univ.) |
| 4th Author's Name |
Akira Sakai |
| 4th Author's Affiliation |
Nagoya University (Nagoya Univ.) |
| 5th Author's Name |
Masaki Ogawa |
| 5th Author's Affiliation |
Nagoya University (Nagoya Univ.) |
| 6th Author's Name |
Shigeaki Zaima |
| 6th Author's Affiliation |
Nagoya University (Nagoya Univ.) |
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| Speaker |
Author-1 |
| Date Time |
2006-06-21 14:30:00 |
| Presentation Time |
25 minutes |
| Registration for |
SDM |
| Paper # |
SDM2006-45 |
| Volume (vol) |
vol.106 |
| Number (no) |
no.108 |
| Page |
pp.19-24 |
| #Pages |
6 |
| Date of Issue |
2006-06-14 (SDM) |