| Paper Abstract and Keywords |
| Presentation |
2006-06-21 13:00
Characterization of oxide films/SiC fabricated by metal-organic chemical vapor deposition
Shiro Hino, Tomohiro Hatayama, Eisuke Tokumitsu (Tokyo Inst. of Tech.), Naruhisa Miura, Tatsuo Oomori (Mitsubishi Elec. Corp.) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
Improvement of insulator/SiC interface is remained as a key issue to fabricate SiC-power-MOSFETs. In this work, to avoid an interface transition layer which is formed at thermally-grown SiO2/SiC interface, HfO2 and Al2O3 films were deposited on SiC by source-gas pulse introduced MOCVD at low temperature. Capacitance – voltage (C-V) characteristics and X-ray photoelectron spectroscopy (XPS) measurement revealed that HfO2/SiC and Al2O3/SiC fabricated at 190 ºC have no sub-oxide at interface and lower interface state densities than typical thermally-grown SiO2/SiC. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
SiC / MOSFET / power device / interface state / / / / |
| Reference Info. |
IEICE Tech. Rep., vol. 106, no. 108, SDM2006-42, pp. 1-5, June 2006. |
| Paper # |
SDM2006-42 |
| Date of Issue |
2006-06-14 (SDM) |
| ISSN |
Print edition: ISSN 0913-5685 |
| Download PDF |
|
| Conference Information |
| Committee |
SDM |
| Conference Date |
2006-06-21 - 2006-06-22 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
Faculty Club, Hiroshima Univ. |
| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
Science and Technologies of Dielectric Thin Films for Future Electron Devices |
| Paper Information |
| Registration To |
SDM |
| Conference Code |
2006-06-SDM |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
Characterization of oxide films/SiC fabricated by metal-organic chemical vapor deposition |
| Sub Title (in English) |
|
| Keyword(1) |
SiC |
| Keyword(2) |
MOSFET |
| Keyword(3) |
power device |
| Keyword(4) |
interface state |
| Keyword(5) |
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| Keyword(6) |
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| Keyword(7) |
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| 1st Author's Name |
Shiro Hino |
| 1st Author's Affiliation |
Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
| 2nd Author's Name |
Tomohiro Hatayama |
| 2nd Author's Affiliation |
Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
| 3rd Author's Name |
Eisuke Tokumitsu |
| 3rd Author's Affiliation |
Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
| 4th Author's Name |
Naruhisa Miura |
| 4th Author's Affiliation |
Mitsubishi Electric Corporation (Mitsubishi Elec. Corp.) |
| 5th Author's Name |
Tatsuo Oomori |
| 5th Author's Affiliation |
Mitsubishi Electric Corporation (Mitsubishi Elec. Corp.) |
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| Speaker |
Author-1 |
| Date Time |
2006-06-21 13:00:00 |
| Presentation Time |
25 minutes |
| Registration for |
SDM |
| Paper # |
SDM2006-42 |
| Volume (vol) |
vol.106 |
| Number (no) |
no.108 |
| Page |
pp.1-5 |
| #Pages |
5 |
| Date of Issue |
2006-06-14 (SDM) |