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Paper Abstract and Keywords
Presentation 2006-06-22 15:05
XPS studies on barrier height at Au/ultra-thin SiO2 interface
Haruhiko Suzuki, Akira Hasegawa, Hiroshi Nohira, Takeo Hattori (Musashi inst technol), Moroyuki Yamawaki, Nobuko Suzuki (SOKENDAI), Daisuke Kobayashi, Kazuyuki Hirose (ISAS)
Abstract (in Japanese) (See Japanese page) 
(in English) As a result of ongoing scale-down of Si-MOS devices, gate SiO2 films have been thinned down to 0.8 nm. In this study, the metal/SiO2 barrier height for ultrathin SiO2 films of less than 1-nm thickness has been investigated by X-ray photoelectron spectroscopy (XPS).
Keyword (in Japanese) (See Japanese page) 
(in English) XPS / Barrier height / Metal/SiO2 / Ultrathin SiO2 / Insulator / / /  
Reference Info. IEICE Tech. Rep., vol. 106, no. 108, SDM2006-63, pp. 119-124, June 2006.
Paper # SDM2006-63 
Date of Issue 2006-06-14 (SDM) 
ISSN Print edition: ISSN 0913-5685
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Conference Information
Committee SDM  
Conference Date 2006-06-21 - 2006-06-22 
Place (in Japanese) (See Japanese page) 
Place (in English) Faculty Club, Hiroshima Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Science and Technologies of Dielectric Thin Films for Future Electron Devices 
Paper Information
Registration To SDM 
Conference Code 2006-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) XPS studies on barrier height at Au/ultra-thin SiO2 interface 
Sub Title (in English)
Keyword(1) XPS  
Keyword(2) Barrier height  
Keyword(3) Metal/SiO2  
Keyword(4) Ultrathin SiO2  
Keyword(5) Insulator  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Haruhiko Suzuki  
1st Author's Affiliation Musashi institute of Technology (Musashi inst technol)
2nd Author's Name Akira Hasegawa  
2nd Author's Affiliation Musashi institute of Technology (Musashi inst technol)
3rd Author's Name Hiroshi Nohira  
3rd Author's Affiliation Musashi institute of Technology (Musashi inst technol)
4th Author's Name Takeo Hattori  
4th Author's Affiliation Musashi institute of Technology (Musashi inst technol)
5th Author's Name Moroyuki Yamawaki  
5th Author's Affiliation The Graduate University for Advanced Studies (SOKENDAI)
6th Author's Name Nobuko Suzuki  
6th Author's Affiliation The Graduate University for Advanced Studies (SOKENDAI)
7th Author's Name Daisuke Kobayashi  
7th Author's Affiliation Institute of Space and Astronautical Science (ISAS)
8th Author's Name Kazuyuki Hirose  
8th Author's Affiliation Institute of Space and Astronautical Science (ISAS)
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Speaker Author-1 
Date Time 2006-06-22 15:05:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2006-63 
Volume (vol) vol.106 
Number (no) no.108 
Page pp.119-124 
#Pages
Date of Issue 2006-06-14 (SDM) 


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