| Paper Abstract and Keywords |
| Presentation |
2006-06-30 10:10
100℃ 10-Gb/s operation of 1.3-μm InGaAsP DFB lasers with Ru-doped semi-insulating buried heterostructure
Ryuzo Iga, Yasuhiro Kondo, Tatsuya Takeshita, Kenji Kishi, Masahiro Yuda (NTT) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
We fabricated 1.3-um InGaAsP DFB lasers buried with a high-resistive ruthenium (Ru)-doped InP and evaluated 10Gb/s operation of the buried laser at high temperatures. The results of L-I characteristics showed that more than 10 mW of output power was obtained at 95 ℃ and CW operation up to 120 ℃ was observed. The high relaxation oscillation frequency of 10 GHz was obtained at 95 ℃. Clear eye openings under 10-Gbit/s direct modulation were achieved from 0 to 100 ℃. No significant degradation was observed for over 5000 hrs under APC mode with a constant output power of 8 mW at 85 ℃. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
high-resistive Ru-InP / buried structure / suppression of Zn diffusion / InGaAsP-MQW DFB laser / 10-Gb/s direct modulation / high temperature operation / relaxation oscillation frequency / |
| Reference Info. |
IEICE Tech. Rep., vol. 106, no. 134, LQE2006-20, pp. 7-10, June 2006. |
| Paper # |
LQE2006-20 |
| Date of Issue |
2006-06-23 (OPE, LQE) |
| ISSN |
Print edition: ISSN 0913-5685 |
| Download PDF |
|
| Conference Information |
| Committee |
OPE LQE |
| Conference Date |
2006-06-30 - 2006-06-30 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
Quantum Effect Optical Devices (optical signal processing, LD, optical amplification, modulation etc.) and Photonic Integrations [ES Summer Meeting on Materials and Devices] |
| Paper Information |
| Registration To |
LQE |
| Conference Code |
2006-06-OPE-LQE |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
100℃ 10-Gb/s operation of 1.3-μm InGaAsP DFB lasers with Ru-doped semi-insulating buried heterostructure |
| Sub Title (in English) |
|
| Keyword(1) |
high-resistive Ru-InP |
| Keyword(2) |
buried structure |
| Keyword(3) |
suppression of Zn diffusion |
| Keyword(4) |
InGaAsP-MQW DFB laser |
| Keyword(5) |
10-Gb/s direct modulation |
| Keyword(6) |
high temperature operation |
| Keyword(7) |
relaxation oscillation frequency |
| Keyword(8) |
|
| 1st Author's Name |
Ryuzo Iga |
| 1st Author's Affiliation |
Nippon Telegraph and Telephone Corp. (NTT) |
| 2nd Author's Name |
Yasuhiro Kondo |
| 2nd Author's Affiliation |
Nippon Telegraph and Telephone Corp. (NTT) |
| 3rd Author's Name |
Tatsuya Takeshita |
| 3rd Author's Affiliation |
Nippon Telegraph and Telephone Corp. (NTT) |
| 4th Author's Name |
Kenji Kishi |
| 4th Author's Affiliation |
Nippon Telegraph and Telephone Corp. (NTT) |
| 5th Author's Name |
Masahiro Yuda |
| 5th Author's Affiliation |
Nippon Telegraph and Telephone Corp. (NTT) |
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| Speaker |
Author-1 |
| Date Time |
2006-06-30 10:10:00 |
| Presentation Time |
25 minutes |
| Registration for |
LQE |
| Paper # |
OPE2006-16, LQE2006-20 |
| Volume (vol) |
vol.106 |
| Number (no) |
no.133(OPE), no.134(LQE) |
| Page |
pp.7-10 |
| #Pages |
4 |
| Date of Issue |
2006-06-23 (OPE, LQE) |