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| Presentation | 2006-08-03 16:30 TFT-controlled FED Masayoshi Nagao, Chiaki Yasumuro, Yuuichi Sakamura, Seigo Kanemaru, Junji Itoh (AIST) Link to ES Tech. Rep. Archives:  ED2006-126 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Thin-film transistor-controlled field-emission display (TFT-controlled FED) was fabricated. Each pixel of the FED has field emitter array (FEA) and a thin-film transistor (TFT) as a control device of FEA. We adopted a multi-gate and lightly-doped drain structured poly-Si TFT for the emission control device. We also adopted amorphous Si FEA with HfC coating for each pixel. Precise control of the emission current by the built-in poly-Si TFT was demonstrated in vacuum chamber. We also developed new packaging method for FED in which sealing of glass panel was performed in vacuum chamber. This method has an advantage of damage free packaging of emitting device. The emission life time of the HfC-coated FEA was measured in the sealed vacuum envelope. More than 2500 hrs of continuous emission without degradation was confirmed. Active matrix device we fabricated is sealed in vacuum envelope using the new method, that is TFT-controlled FED, and its operation was confirmed. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | vacuum nanoelectronics / field emission display / thin film transistor / hafnium carbide / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 106, no. 200, ED2006-126, pp. 47-52, Aug. 2006. | |
| Paper # | ED2006-126 | |
| Date of Issue | 2006-07-27 (ED) | |
| ISSN | Print edition: ISSN 0913-5685 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | Link to ES Tech. Rep. Archives: ED2006-126 |
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| Conference Information | |
| Committee | ED |
| Conference Date | 2006-08-03 - 2006-08-04 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Osaka Univ. Convention Center |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2006-08-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | TFT-controlled FED |
| Sub Title (in English) | |
| Keyword(1) | vacuum nanoelectronics |
| Keyword(2) | field emission display |
| Keyword(3) | thin film transistor |
| Keyword(4) | hafnium carbide |
| Keyword(5) | |
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| 1st Author's Name | Masayoshi Nagao |
| 1st Author's Affiliation | National Institute of Advanced Industrial Science and (AIST) |
| 2nd Author's Name | Chiaki Yasumuro |
| 2nd Author's Affiliation | National Institute of Advanced Industrial Science and (AIST) |
| 3rd Author's Name | Yuuichi Sakamura |
| 3rd Author's Affiliation | National Institute of Advanced Industrial Science and (AIST) |
| 4th Author's Name | Seigo Kanemaru |
| 4th Author's Affiliation | National Institute of Advanced Industrial Science and (AIST) |
| 5th Author's Name | Junji Itoh |
| 5th Author's Affiliation | National Institute of Advanced Industrial Science and (AIST) |
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| Speaker | Author-1 |
| Date Time | 2006-08-03 16:30:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2006-126 |
| Volume (vol) | vol.106 |
| Number (no) | no.200 |
| Page | pp.47-52 |
| #Pages | 6 |
| Date of Issue | 2006-07-27 (ED) |
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