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Paper Abstract and Keywords
Presentation 2006-08-03 16:30
TFT-controlled FED
Masayoshi Nagao, Chiaki Yasumuro, Yuuichi Sakamura, Seigo Kanemaru, Junji Itoh (AIST)
Abstract (in Japanese) (See Japanese page) 
(in English) Thin-film transistor-controlled field-emission display (TFT-controlled FED) was fabricated. Each pixel of the FED has field emitter array (FEA) and a thin-film transistor (TFT) as a control device of FEA. We adopted a multi-gate and lightly-doped drain structured poly-Si TFT for the emission control device. We also adopted amorphous Si FEA with HfC coating for each pixel. Precise control of the emission current by the built-in poly-Si TFT was demonstrated in vacuum chamber. We also developed new packaging method for FED in which sealing of glass panel was performed in vacuum chamber. This method has an advantage of damage free packaging of emitting device. The emission life time of the HfC-coated FEA was measured in the sealed vacuum envelope. More than 2500 hrs of continuous emission without degradation was confirmed. Active matrix device we fabricated is sealed in vacuum envelope using the new method, that is TFT-controlled FED, and its operation was confirmed.
Keyword (in Japanese) (See Japanese page) 
(in English) vacuum nanoelectronics / field emission display / thin film transistor / hafnium carbide / / / /  
Reference Info. IEICE Tech. Rep., vol. 106, no. 200, ED2006-126, pp. 47-52, Aug. 2006.
Paper # ED2006-126 
Date of Issue 2006-07-27 (ED) 
ISSN Print edition: ISSN 0913-5685
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Conference Information
Committee ED  
Conference Date 2006-08-03 - 2006-08-04 
Place (in Japanese) (See Japanese page) 
Place (in English) Osaka Univ. Convention Center 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2006-08-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) TFT-controlled FED 
Sub Title (in English)  
Keyword(1) vacuum nanoelectronics  
Keyword(2) field emission display  
Keyword(3) thin film transistor  
Keyword(4) hafnium carbide  
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1st Author's Name Masayoshi Nagao  
1st Author's Affiliation National Institute of Advanced Industrial Science and (AIST)
2nd Author's Name Chiaki Yasumuro  
2nd Author's Affiliation National Institute of Advanced Industrial Science and (AIST)
3rd Author's Name Yuuichi Sakamura  
3rd Author's Affiliation National Institute of Advanced Industrial Science and (AIST)
4th Author's Name Seigo Kanemaru  
4th Author's Affiliation National Institute of Advanced Industrial Science and (AIST)
5th Author's Name Junji Itoh  
5th Author's Affiliation National Institute of Advanced Industrial Science and (AIST)
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Speaker Author-1 
Date Time 2006-08-03 16:30:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2006-126 
Volume (vol) vol.106 
Number (no) no.200 
Page pp.47-52 
#Pages 6 
Date of Issue 2006-07-27 (ED) 

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