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Paper Abstract and Keywords
Presentation 2006-09-26 13:00
Improvement of Drive Current in Bulk-FinFET using Full 3D Process/Device Simulations
Takahisa Kanemura, Takashi Izumida, Nobutoshi Aoki, Masaki Kondo, Sanae Ito, Toshiyuki Enda, Kimitoshi Okano, Hirohisa Kawasaki, Atsushi Yagishita, Akio Kaneko, Satoshi Inaba, Mitsutoshi Nakamura, Kazunari Ishimaru, Kyoichi Suguro, Kazuhiro Eguchi (Toshiba Corp.)
Abstract (in Japanese) (See Japanese page) 
(in English) We discussed the optimization of structure of bulk-FinFETs and ion implantations by using 3-D process and device simulations. The ion implantation for channel region was determined so as to realize higher drive current with lower punch-through current. The analysis of mechanical stress for bulk-FinFETs and SOI-FinFETs revealed that the channel stress induced by a stress liner in the bulk-FinFET was larger than that for the SOI-FinFET. In addition, we applied a raised source/drain (RSD) structure to the bulk-FinFETs and optimized ion implantations in the RSD region. The combination of stress liner and RSD structure is found to be efficient for improving drive current of a bulk-FinFET.
Keyword (in Japanese) (See Japanese page) 
(in English) FinFET / drive current / punch-through current / mobility enhancement / optimization / 3-D process simulation / 3-D device simulation / TCAD  
Reference Info. IEICE Tech. Rep., vol. 106, no. 256, SDM2006-164, pp. 25-29, Sept. 2006.
Paper # SDM2006-164 
Date of Issue 2006-09-18 (VLD, SDM) 
ISSN Print edition: ISSN 0913-5685
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Conference Information
Committee SDM VLD  
Conference Date 2006-09-25 - 2006-09-26 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process, Device, Circuit Simulation, etc. 
Paper Information
Registration To SDM 
Conference Code 2006-09-SDM-VLD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Improvement of Drive Current in Bulk-FinFET using Full 3D Process/Device Simulations 
Sub Title (in English)  
Keyword(1) FinFET  
Keyword(2) drive current  
Keyword(3) punch-through current  
Keyword(4) mobility enhancement  
Keyword(5) optimization  
Keyword(6) 3-D process simulation  
Keyword(7) 3-D device simulation  
Keyword(8) TCAD  
1st Author's Name Takahisa Kanemura  
1st Author's Affiliation Toshiba Corporation (Toshiba Corp.)
2nd Author's Name Takashi Izumida  
2nd Author's Affiliation Toshiba Corporation (Toshiba Corp.)
3rd Author's Name Nobutoshi Aoki  
3rd Author's Affiliation Toshiba Corporation (Toshiba Corp.)
4th Author's Name Masaki Kondo  
4th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
5th Author's Name Sanae Ito  
5th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
6th Author's Name Toshiyuki Enda  
6th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
7th Author's Name Kimitoshi Okano  
7th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
8th Author's Name Hirohisa Kawasaki  
8th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
9th Author's Name Atsushi Yagishita  
9th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
10th Author's Name Akio Kaneko  
10th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
11th Author's Name Satoshi Inaba  
11th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
12th Author's Name Mitsutoshi Nakamura  
12th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
13th Author's Name Kazunari Ishimaru  
13th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
14th Author's Name Kyoichi Suguro  
14th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
15th Author's Name Kazuhiro Eguchi  
15th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
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Speaker Author-1 
Date Time 2006-09-26 13:00:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # VLD2006-43, SDM2006-164 
Volume (vol) vol.106 
Number (no) no.254(VLD), no.256(SDM) 
Page pp.25-29 
#Pages 5 
Date of Issue 2006-09-18 (VLD, SDM) 

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