| IEICE Technical Committee Submission System Conference Paper's Information |
Online Proceedings [Sign in] Tech. Rep. Archives |
| Go Top Page | Go Previous | [Japanese] / [English] |
| Paper Abstract and Keywords | ||
| Presentation | 2006-09-26 13:00 Improvement of Drive Current in Bulk-FinFET using Full 3D Process/Device Simulations Takahisa Kanemura, Takashi Izumida, Nobutoshi Aoki, Masaki Kondo, Sanae Ito, Toshiyuki Enda, Kimitoshi Okano, Hirohisa Kawasaki, Atsushi Yagishita, Akio Kaneko, Satoshi Inaba, Mitsutoshi Nakamura, Kazunari Ishimaru, Kyoichi Suguro, Kazuhiro Eguchi (Toshiba Corp.) Link to ES Tech. Rep. Archives:  SDM2006-164 |
|
| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We discussed the optimization of structure of bulk-FinFETs and ion implantations by using 3-D process and device simulations. The ion implantation for channel region was determined so as to realize higher drive current with lower punch-through current. The analysis of mechanical stress for bulk-FinFETs and SOI-FinFETs revealed that the channel stress induced by a stress liner in the bulk-FinFET was larger than that for the SOI-FinFET. In addition, we applied a raised source/drain (RSD) structure to the bulk-FinFETs and optimized ion implantations in the RSD region. The combination of stress liner and RSD structure is found to be efficient for improving drive current of a bulk-FinFET. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | FinFET / drive current / punch-through current / mobility enhancement / optimization / 3-D process simulation / 3-D device simulation / TCAD | |
| Reference Info. | IEICE Tech. Rep., vol. 106, no. 256, SDM2006-164, pp. 25-29, Sept. 2006. | |
| Paper # | SDM2006-164 | |
| Date of Issue | 2006-09-18 (VLD, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | Link to ES Tech. Rep. Archives: SDM2006-164 |
|
| Conference Information | |
| Committee | SDM VLD |
| Conference Date | 2006-09-25 - 2006-09-26 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process, Device, Circuit Simulation, etc. |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2006-09-SDM-VLD |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Improvement of Drive Current in Bulk-FinFET using Full 3D Process/Device Simulations |
| Sub Title (in English) | |
| Keyword(1) | FinFET |
| Keyword(2) | drive current |
| Keyword(3) | punch-through current |
| Keyword(4) | mobility enhancement |
| Keyword(5) | optimization |
| Keyword(6) | 3-D process simulation |
| Keyword(7) | 3-D device simulation |
| Keyword(8) | TCAD |
| 1st Author's Name | Takahisa Kanemura |
| 1st Author's Affiliation | Toshiba Corporation (Toshiba Corp.) |
| 2nd Author's Name | Takashi Izumida |
| 2nd Author's Affiliation | Toshiba Corporation (Toshiba Corp.) |
| 3rd Author's Name | Nobutoshi Aoki |
| 3rd Author's Affiliation | Toshiba Corporation (Toshiba Corp.) |
| 4th Author's Name | Masaki Kondo |
| 4th Author's Affiliation | Toshiba Corporation (Toshiba Corp.) |
| 5th Author's Name | Sanae Ito |
| 5th Author's Affiliation | Toshiba Corporation (Toshiba Corp.) |
| 6th Author's Name | Toshiyuki Enda |
| 6th Author's Affiliation | Toshiba Corporation (Toshiba Corp.) |
| 7th Author's Name | Kimitoshi Okano |
| 7th Author's Affiliation | Toshiba Corporation (Toshiba Corp.) |
| 8th Author's Name | Hirohisa Kawasaki |
| 8th Author's Affiliation | Toshiba Corporation (Toshiba Corp.) |
| 9th Author's Name | Atsushi Yagishita |
| 9th Author's Affiliation | Toshiba Corporation (Toshiba Corp.) |
| 10th Author's Name | Akio Kaneko |
| 10th Author's Affiliation | Toshiba Corporation (Toshiba Corp.) |
| 11th Author's Name | Satoshi Inaba |
| 11th Author's Affiliation | Toshiba Corporation (Toshiba Corp.) |
| 12th Author's Name | Mitsutoshi Nakamura |
| 12th Author's Affiliation | Toshiba Corporation (Toshiba Corp.) |
| 13th Author's Name | Kazunari Ishimaru |
| 13th Author's Affiliation | Toshiba Corporation (Toshiba Corp.) |
| 14th Author's Name | Kyoichi Suguro |
| 14th Author's Affiliation | Toshiba Corporation (Toshiba Corp.) |
| 15th Author's Name | Kazuhiro Eguchi |
| 15th Author's Affiliation | Toshiba Corporation (Toshiba Corp.) |
| 16th Author's Name | |
| 16th Author's Affiliation | () |
| 17th Author's Name | |
| 17th Author's Affiliation | () |
| 18th Author's Name | |
| 18th Author's Affiliation | () |
| Speaker | Author-1 |
| Date Time | 2006-09-26 13:00:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | VLD2006-43, SDM2006-164 |
| Volume (vol) | vol.106 |
| Number (no) | no.254(VLD), no.256(SDM) |
| Page | pp.25-29 |
| #Pages | 5 |
| Date of Issue | 2006-09-18 (VLD, SDM) |
[Return to Top Page]