Paper Abstract and Keywords |
Presentation |
2006-10-04 13:30
High voltage-capacitance characteristics measurement for SiC-JFET
-- Circuit for applying high voltage and gate voltage to SiC-JFET -- Syuntaro Matsuzaki, Tsuyoshi Funaki, Takashi Hikihara (Kyoto Univ.) |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have been modeling SiC power devices for circuit simulation to design and evaluate power converter circuit.
The electrical characteristics measurement of SiC--SBD and its modeling were discussed in the previous article.
This article reports the measuring methods for the characterization of SiC-JFET.
The DC characteristics of a device can be measured by using existing measuring equipments.
However there is no existing devices to measure the AC characteristics of SiC-JFET input capacitance, output capacitance, and feedback capacitance over high bias drain voltage with applying negative DC gate voltage to keep the JFET off condition.
The authors propose measurement circuits for the AC characterization of a JFET.
The authors also discuss the models of SiC--JFET with the measured AC and DC characteristics. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
SiC-JFET / Capacitance characteristics / Injected gate charge / Parameter extraction / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 106, no. 272, CAS2006-24, pp. 19-24, Oct. 2006. |
Paper # |
CAS2006-24 |
Date of Issue |
2006-09-27 (CAS, NLP) |
ISSN |
Print edition: ISSN 0913-5685 |
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Conference Information |
Committee |
NLP CAS |
Conference Date |
2006-10-04 - 2006-10-05 |
Place (in Japanese) |
(See Japanese page) |
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Paper Information |
Registration To |
CAS |
Conference Code |
2006-10-NLP-CAS |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
High voltage-capacitance characteristics measurement for SiC-JFET |
Sub Title (in English) |
Circuit for applying high voltage and gate voltage to SiC-JFET |
Keyword(1) |
SiC-JFET |
Keyword(2) |
Capacitance characteristics |
Keyword(3) |
Injected gate charge |
Keyword(4) |
Parameter extraction |
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1st Author's Name |
Syuntaro Matsuzaki |
1st Author's Affiliation |
Kyoto University (Kyoto Univ.) |
2nd Author's Name |
Tsuyoshi Funaki |
2nd Author's Affiliation |
Kyoto University (Kyoto Univ.) |
3rd Author's Name |
Takashi Hikihara |
3rd Author's Affiliation |
Kyoto University (Kyoto Univ.) |
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Speaker |
Author-1 |
Date Time |
2006-10-04 13:30:00 |
Presentation Time |
25 minutes |
Registration for |
CAS |
Paper # |
CAS2006-24, NLP2006-47 |
Volume (vol) |
vol.106 |
Number (no) |
no.272(CAS), no.274(NLP) |
Page |
pp.19-24 |
#Pages |
6 |
Date of Issue |
2006-09-27 (CAS, NLP) |