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Paper Abstract and Keywords
Presentation 2006-10-05 14:15
Study on crystal growth of AlGaN/GaN HEMT on SiC substrate
Takahiko Iwasaki, Hiroyasu Ishikawa, Takashi Egawa (Nagoya Inst. Tech.)
Abstract (in Japanese) (See Japanese page) 
(in English) AlGaN/GaN HEMT is a promising candidate for next generation high-power and high-frequency devices. In our study to improve electron mobility, MOCVD method was used to grow AlGaN/GaN HEMT structure on SiC substrate. In the investigation of AlN initial layer thickness dependence, AlN initial layer with 100 nm thickness shows very good electron mobility of 1568 cm2/Vs at RT. Furthermore, in our study with the insertion of AlN spacer layer and its thickness dependence, high electron mobility of 2189 cm2/Vs at RT and 20998 cm2/Vs at 77 K were obtained.
Keyword (in Japanese) (See Japanese page) 
(in English) SiC substrate / GaN / AlGaN/GaN / MOCVD / HEMT / / /  
Reference Info. IEICE Tech. Rep., vol. 106, no. 269, ED2006-155, pp. 19-22, Oct. 2006.
Paper # ED2006-155 
Date of Issue 2006-09-28 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685
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Conference Information
Committee ED CPM LQE  
Conference Date 2006-10-05 - 2006-10-06 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2006-10-ED-CPM-LQE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Study on crystal growth of AlGaN/GaN HEMT on SiC substrate 
Sub Title (in English)  
Keyword(1) SiC substrate  
Keyword(2) GaN  
Keyword(3) AlGaN/GaN  
Keyword(4) MOCVD  
Keyword(5) HEMT  
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Keyword(7)  
Keyword(8)  
1st Author's Name Takahiko Iwasaki  
1st Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. Tech.)
2nd Author's Name Hiroyasu Ishikawa  
2nd Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. Tech.)
3rd Author's Name Takashi Egawa  
3rd Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. Tech.)
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Speaker Author-1 
Date Time 2006-10-05 14:15:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2006-155, CPM2006-92, LQE2006-59 
Volume (vol) vol.106 
Number (no) no.269(ED), no.270(CPM), no.271(LQE) 
Page pp.19-22 
#Pages 4 
Date of Issue 2006-09-28 (ED, CPM, LQE) 

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