| Paper Abstract and Keywords |
| Presentation |
2006-10-06 16:50
Effects of ion damage reduction due to N2+ on InN film growth on Si substrate by ECR-MBE method
Tokuo Yodo, Teruya Shimada, Sumito Tagawa, Ryo Nishimoto, Shiro Hidaka, Keita Ishi, Hiroshi Segawa, Junichi Hirakawa, Yoshiyuki Harada (Osaka Inst.of Tech.) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
The problem of ECR-MBE method is to generate the N2+ ion from ECR plasma during growth that damages the film. The bad influence of ion damage becomes bigger problem in InN growth. There are two methods using the substrate bias and the magnetic field in order to control the ion damage. However, we have investigated influence of the plasma condition on the crystalline quality and tried to improve this problem in this report. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
Hexagonal InN / ECR-plasma assisted MBE / ECR-plasma / Si(111) substrate / ion damage / PL emission / / |
| Reference Info. |
IEICE Tech. Rep., vol. 106, no. 269, ED2006-175, pp. 121-125, Oct. 2006. |
| Paper # |
ED2006-175 |
| Date of Issue |
2006-09-28 (ED, CPM, LQE) |
| ISSN |
Print edition: ISSN 0913-5685 |
| Download PDF |
|
| Conference Information |
| Committee |
ED CPM LQE |
| Conference Date |
2006-10-05 - 2006-10-06 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
|
| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
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| Paper Information |
| Registration To |
ED |
| Conference Code |
2006-10-ED-CPM-LQE |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
Effects of ion damage reduction due to N2+ on InN film growth on Si substrate by ECR-MBE method |
| Sub Title (in English) |
|
| Keyword(1) |
Hexagonal InN |
| Keyword(2) |
ECR-plasma assisted MBE |
| Keyword(3) |
ECR-plasma |
| Keyword(4) |
Si(111) substrate |
| Keyword(5) |
ion damage |
| Keyword(6) |
PL emission |
| Keyword(7) |
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| Keyword(8) |
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| 1st Author's Name |
Tokuo Yodo |
| 1st Author's Affiliation |
Osaka Institute of Technology (Osaka Inst.of Tech.) |
| 2nd Author's Name |
Teruya Shimada |
| 2nd Author's Affiliation |
Osaka Institute of Technology (Osaka Inst.of Tech.) |
| 3rd Author's Name |
Sumito Tagawa |
| 3rd Author's Affiliation |
Osaka Institute of Technology (Osaka Inst.of Tech.) |
| 4th Author's Name |
Ryo Nishimoto |
| 4th Author's Affiliation |
Osaka Institute of Technology (Osaka Inst.of Tech.) |
| 5th Author's Name |
Shiro Hidaka |
| 5th Author's Affiliation |
Osaka Institute of Technology (Osaka Inst.of Tech.) |
| 6th Author's Name |
Keita Ishi |
| 6th Author's Affiliation |
Osaka Institute of Technology (Osaka Inst.of Tech.) |
| 7th Author's Name |
Hiroshi Segawa |
| 7th Author's Affiliation |
Osaka Institute of Technology (Osaka Inst.of Tech.) |
| 8th Author's Name |
Junichi Hirakawa |
| 8th Author's Affiliation |
Osaka Institute of Technology (Osaka Inst.of Tech.) |
| 9th Author's Name |
Yoshiyuki Harada |
| 9th Author's Affiliation |
Osaka Institute of Technology (Osaka Inst.of Tech.) |
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| Speaker |
Author-1 |
| Date Time |
2006-10-06 16:50:00 |
| Presentation Time |
25 minutes |
| Registration for |
ED |
| Paper # |
ED2006-175, CPM2006-112, LQE2006-79 |
| Volume (vol) |
vol.106 |
| Number (no) |
no.269(ED), no.270(CPM), no.271(LQE) |
| Page |
pp.121-125 |
| #Pages |
5 |
| Date of Issue |
2006-09-28 (ED, CPM, LQE) |