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Paper Abstract and Keywords
Presentation 2007-01-19 10:35
A 3.5 GHz low distortion high powr FET using GaAs on-chip harmonic tuning circuit
Seiki Goto, Tetsuo Kunii, Akira Inoue (Mitsubishi Electric Corp.), Toshikazu Oue (WTI), Masaki Kohno, Tomoki Oku, Takahide Ishikawa (Mitsubishi Electric Corp.) Link to ES Tech. Rep. Archives: ED2006-228 MW2006-181
Abstract (in Japanese) (See Japanese page) 
(in English) An ultra low distortion class-F power amplifier for 3.5GHz base stations of broadband access systems is presented. The feature of this amplifier is an GaAs on-chip input 2nd harmonic tuning circuit placed in front of each FET unit cell to achieve the linearity under class AB operating conditions by the accurate control of input 2nd harmonic impedance. With the proposed FET, a single-chip multi-cell FET for verification exhibits a low distortion of a -51 dBc ACPR and a 19% PAE with a 11.8-dB associated gain at a 10-dB back-off output power level under a 3.5-GHz 3GPP W-CDMA signal test. This ACPR corresponds to a 10-dB reduction in ACPR of a conventional FET. In addition, a 25 W power amplifier with two proposed FET chips successfully achieves a 1.5% EVM (Error Vector Magnitude) at an output power of 34.6 dBm under a 3.5-GHz WiMAX (IEEE 802.16a) compliant OFDM signal test, where the output power is a 10-dB back-off level.
Keyword (in Japanese) (See Japanese page) 
(in English) power amplifier / transistor / distortion / microwave communication / GaAs / WiMAX / /  
Reference Info. IEICE Tech. Rep., vol. 106, no. 459, ED2006-228, pp. 155-160, Jan. 2007.
Paper # ED2006-228 
Date of Issue 2007-01-10 (ED, MW) 
ISSN Print edition: ISSN 0913-5685
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF Link to ES Tech. Rep. Archives: ED2006-228 MW2006-181

Conference Information
Committee MW ED  
Conference Date 2007-01-17 - 2007-01-19 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2007-01-MW-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A 3.5 GHz low distortion high powr FET using GaAs on-chip harmonic tuning circuit 
Sub Title (in English)  
Keyword(1) power amplifier  
Keyword(2) transistor  
Keyword(3) distortion  
Keyword(4) microwave communication  
Keyword(5) GaAs  
Keyword(6) WiMAX  
Keyword(7)  
Keyword(8)  
1st Author's Name Seiki Goto  
1st Author's Affiliation Mitsubishi Electoric Corporation (Mitsubishi Electric Corp.)
2nd Author's Name Tetsuo Kunii  
2nd Author's Affiliation Mitsubishi Electoric Corporation (Mitsubishi Electric Corp.)
3rd Author's Name Akira Inoue  
3rd Author's Affiliation Mitsubishi Electoric Corporation (Mitsubishi Electric Corp.)
4th Author's Name Toshikazu Oue  
4th Author's Affiliation Wave Technology Inc. (WTI)
5th Author's Name Masaki Kohno  
5th Author's Affiliation Mitsubishi Electoric Corporation (Mitsubishi Electric Corp.)
6th Author's Name Tomoki Oku  
6th Author's Affiliation Mitsubishi Electoric Corporation (Mitsubishi Electric Corp.)
7th Author's Name Takahide Ishikawa  
7th Author's Affiliation Mitsubishi Electoric Corporation (Mitsubishi Electric Corp.)
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Speaker Author-1 
Date Time 2007-01-19 10:35:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2006-228, MW2006-181 
Volume (vol) vol.106 
Number (no) no.459(ED), no.460(MW) 
Page pp.155-160 
#Pages
Date of Issue 2007-01-10 (ED, MW) 


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