Paper Abstract and Keywords |
Presentation |
2007-02-01 14:45
[Invited Talk]
SiGe Quantum Effect Devices Yoshiyuki Suda, Hirotaka Maekawa, Yoshihiro Sano, Youichi Takahashi, Tadamasa Kobayashi, Hiroaki Hanafusa (TUAT) Link to ES Tech. Rep. Archives: ED2006-243 SDM2006-231 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We are developing SiGe resonant tunneling diodes and an artificially positioned Ge dot array for light communication systems as next-generation nano devices using a Si-system material which is promising in terms of earth resources. Through this work, we have developed a Si1-xGex sputter epitaxy method in terms of environmental load issues. We also have proposed a strain-relieving quadruple-layer buffer with which misfit dislocations are evenly distributed in the lower two interfaces and the upper two layers prevent threading dislocations from being propagated to the buffer surface. With this buffer, we have developed electron-tunneling vertical- and planer-type double-quantum-well RTDs. And the negative resistance characteristics of double-quantum-well hole-tunneling RTDs have been first observed at room temperature. Further, we have cleared the Ge dot artificially positioning mechanisms and method and have successfully fabricated artificially dot-positioned stacked Ge dot array. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Quantum Effect Device / Resonant Tunneling Diode / Strain Relief / Ge Dot / Nano Device / / / |
Reference Info. |
IEICE Tech. Rep., vol. 106, no. 520, ED2006-243, pp. 17-22, Feb. 2007. |
Paper # |
ED2006-243 |
Date of Issue |
2007-01-25 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 |
Copyright and reproduction |
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Link to ES Tech. Rep. Archives: ED2006-243 SDM2006-231 |
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