| Paper Abstract and Keywords |
| Presentation |
2007-02-01 14:45
[Invited Talk]
SiGe Quantum Effect Devices
Yoshiyuki Suda, Hirotaka Maekawa, Yoshihiro Sano, Youichi Takahashi, Tadamasa Kobayashi, Hiroaki Hanafusa (TUAT) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
We are developing SiGe resonant tunneling diodes and an artificially positioned Ge dot array for light communication systems as next-generation nano devices using a Si-system material which is promising in terms of earth resources. Through this work, we have developed a Si1-xGex sputter epitaxy method in terms of environmental load issues. We also have proposed a strain-relieving quadruple-layer buffer with which misfit dislocations are evenly distributed in the lower two interfaces and the upper two layers prevent threading dislocations from being propagated to the buffer surface. With this buffer, we have developed electron-tunneling vertical- and planer-type double-quantum-well RTDs. And the negative resistance characteristics of double-quantum-well hole-tunneling RTDs have been first observed at room temperature. Further, we have cleared the Ge dot artificially positioning mechanisms and method and have successfully fabricated artificially dot-positioned stacked Ge dot array. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
Quantum Effect Device / Resonant Tunneling Diode / Strain Relief / Ge Dot / Nano Device / / / |
| Reference Info. |
IEICE Tech. Rep., vol. 106, no. 520, ED2006-243, pp. 17-22, Feb. 2007. |
| Paper # |
ED2006-243 |
| Date of Issue |
2007-01-25 (ED, SDM) |
| ISSN |
Print edition: ISSN 0913-5685 |
| Download PDF |
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| Conference Information |
| Committee |
SDM ED |
| Conference Date |
2007-02-01 - 2007-02-02 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
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| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
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| Paper Information |
| Registration To |
ED |
| Conference Code |
2007-02-SDM-ED |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
SiGe Quantum Effect Devices |
| Sub Title (in English) |
* |
| Keyword(1) |
Quantum Effect Device |
| Keyword(2) |
Resonant Tunneling Diode |
| Keyword(3) |
Strain Relief |
| Keyword(4) |
Ge Dot |
| Keyword(5) |
Nano Device |
| Keyword(6) |
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| 1st Author's Name |
Yoshiyuki Suda |
| 1st Author's Affiliation |
Tokyo University of Agriculture and Technology (TUAT) |
| 2nd Author's Name |
Hirotaka Maekawa |
| 2nd Author's Affiliation |
Tokyo University of Agriculture and Technology (TUAT) |
| 3rd Author's Name |
Yoshihiro Sano |
| 3rd Author's Affiliation |
Tokyo University of Agriculture and Technology (TUAT) |
| 4th Author's Name |
Youichi Takahashi |
| 4th Author's Affiliation |
Tokyo University of Agriculture and Technology (TUAT) |
| 5th Author's Name |
Tadamasa Kobayashi |
| 5th Author's Affiliation |
Tokyo University of Agriculture and Technology (TUAT) |
| 6th Author's Name |
Hiroaki Hanafusa |
| 6th Author's Affiliation |
Tokyo University of Agriculture and Technology (TUAT) |
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| Speaker |
Author-1 |
| Date Time |
2007-02-01 14:45:00 |
| Presentation Time |
40 minutes |
| Registration for |
ED |
| Paper # |
ED2006-243, SDM2006-231 |
| Volume (vol) |
vol.106 |
| Number (no) |
no.520(ED), no.521(SDM) |
| Page |
pp.17-22 |
| #Pages |
6 |
| Date of Issue |
2007-01-25 (ED, SDM) |