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Paper Abstract and Keywords
Presentation 2007-02-01 14:45
[Invited Talk] SiGe Quantum Effect Devices
Yoshiyuki Suda, Hirotaka Maekawa, Yoshihiro Sano, Youichi Takahashi, Tadamasa Kobayashi, Hiroaki Hanafusa (TUAT) Link to ES Tech. Rep. Archives: ED2006-243 SDM2006-231
Abstract (in Japanese) (See Japanese page) 
(in English) We are developing SiGe resonant tunneling diodes and an artificially positioned Ge dot array for light communication systems as next-generation nano devices using a Si-system material which is promising in terms of earth resources. Through this work, we have developed a Si1-xGex sputter epitaxy method in terms of environmental load issues. We also have proposed a strain-relieving quadruple-layer buffer with which misfit dislocations are evenly distributed in the lower two interfaces and the upper two layers prevent threading dislocations from being propagated to the buffer surface. With this buffer, we have developed electron-tunneling vertical- and planer-type double-quantum-well RTDs. And the negative resistance characteristics of double-quantum-well hole-tunneling RTDs have been first observed at room temperature. Further, we have cleared the Ge dot artificially positioning mechanisms and method and have successfully fabricated artificially dot-positioned stacked Ge dot array.
Keyword (in Japanese) (See Japanese page) 
(in English) Quantum Effect Device / Resonant Tunneling Diode / Strain Relief / Ge Dot / Nano Device / / /  
Reference Info. IEICE Tech. Rep., vol. 106, no. 520, ED2006-243, pp. 17-22, Feb. 2007.
Paper # ED2006-243 
Date of Issue 2007-01-25 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF Link to ES Tech. Rep. Archives: ED2006-243 SDM2006-231

Conference Information
Committee SDM ED  
Conference Date 2007-02-01 - 2007-02-02 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2007-02-SDM-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) SiGe Quantum Effect Devices 
Sub Title (in English)
Keyword(1) Quantum Effect Device  
Keyword(2) Resonant Tunneling Diode  
Keyword(3) Strain Relief  
Keyword(4) Ge Dot  
Keyword(5) Nano Device  
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1st Author's Name Yoshiyuki Suda  
1st Author's Affiliation Tokyo University of Agriculture and Technology (TUAT)
2nd Author's Name Hirotaka Maekawa  
2nd Author's Affiliation Tokyo University of Agriculture and Technology (TUAT)
3rd Author's Name Yoshihiro Sano  
3rd Author's Affiliation Tokyo University of Agriculture and Technology (TUAT)
4th Author's Name Youichi Takahashi  
4th Author's Affiliation Tokyo University of Agriculture and Technology (TUAT)
5th Author's Name Tadamasa Kobayashi  
5th Author's Affiliation Tokyo University of Agriculture and Technology (TUAT)
6th Author's Name Hiroaki Hanafusa  
6th Author's Affiliation Tokyo University of Agriculture and Technology (TUAT)
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Speaker Author-1 
Date Time 2007-02-01 14:45:00 
Presentation Time 40 minutes 
Registration for ED 
Paper # ED2006-243, SDM2006-231 
Volume (vol) vol.106 
Number (no) no.520(ED), no.521(SDM) 
Page pp.17-22 
#Pages
Date of Issue 2007-01-25 (ED, SDM) 


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