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Paper Abstract and Keywords
Presentation 2007-03-15 13:30
Reset switching mechanism of ReRAM using thermal reaction model
Yoshihiro Sato, Kentaro Kinoshita, Hideyuki Noshiro, Masaki Aoki, Yoshihiro Sugiyama (FUJITSU LAB.)
Abstract (in Japanese) (See Japanese page) 
(in English) We investigated the resistive memory (ReRAM) cells with binary metal oxide (BMO) junctions by applying a short voltage pulse and found that the response time of the RESET process was dependent on the resistance in the low resistive state. The temperature of the filamentary conductive path in the BMO film in the RESET process was estimated to reach the same temperature grade in each RESET by using a thermal conductive equation. The previous experimental relation is well explained by assuming a general thermal chemical reaction model for the RESET process.
Keyword (in Japanese) (See Japanese page) 
(in English) ReRAM / resistive memory / NiO / TiO2 / RESET / thermal chemical reaction model / filament /  
Reference Info. IEICE Tech. Rep., vol. 106, no. 593, SDM2006-255, pp. 7-10, March 2007.
Paper # SDM2006-255 
Date of Issue 2007-03-08 (SDM) 
ISSN Print edition: ISSN 0913-5685
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Conference Information
Committee SDM  
Conference Date 2007-03-15 - 2007-03-15 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2007-03-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Reset switching mechanism of ReRAM using thermal reaction model 
Sub Title (in English)  
Keyword(1) ReRAM  
Keyword(2) resistive memory  
Keyword(3) NiO  
Keyword(4) TiO2  
Keyword(5) RESET  
Keyword(6) thermal chemical reaction model  
Keyword(7) filament  
Keyword(8)  
1st Author's Name Yoshihiro Sato  
1st Author's Affiliation FUJITSU LABORATORIES (FUJITSU LAB.)
2nd Author's Name Kentaro Kinoshita  
2nd Author's Affiliation FUJITSU LABORATORIES (FUJITSU LAB.)
3rd Author's Name Hideyuki Noshiro  
3rd Author's Affiliation FUJITSU LABORATORIES (FUJITSU LAB.)
4th Author's Name Masaki Aoki  
4th Author's Affiliation FUJITSU LABORATORIES (FUJITSU LAB.)
5th Author's Name Yoshihiro Sugiyama  
5th Author's Affiliation FUJITSU LABORATORIES (FUJITSU LAB.)
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Speaker Author-1 
Date Time 2007-03-15 13:30:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2006-255 
Volume (vol) vol.106 
Number (no) no.593 
Page pp.7-10 
#Pages
Date of Issue 2007-03-08 (SDM) 


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