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Paper Abstract and Keywords
Presentation 2007-04-12 10:40
Device Technology for embedded DRAM utilizing stacked MIM(Metal-Insulator-Metal) Capacitor
Takaho Tanigawa, Yasushi Yamagata, Hiroki Shirai, Hirotoshi Sugimura, Tomoko Wake, Ken Inoue, Takashi Sakoh, Masato Sakao (NECEL) ICD2007-4
Abstract (in Japanese) (See Japanese page) 
(in English) This paper presents embedded DRAM device technology utilizing stacked MIM(Metal-Insulator-Metal) capacitor. Targeted for high random-access performance as well as low-power data-streaming applications, original structure named “Full Metal DRAM” has been devised and implemented from 150nm generation. This features reduced parasitic resistance of DRAM cell and fully-compatible CMOS Trs. characteristics with that of leading-edge CMOS. In 90nm generation, ZrO2 is introduced as capacitor dielectric material for cell size reduction. For the next generation of 55nm, high-k gate dielectric(HfSiON) will be introduced in CMOS platform, which can be effectively exploited for embedded DRAM scaling and performance improvement.
Keyword (in Japanese) (See Japanese page) 
(in English) embedded DRAM / MIM Capacitor / High-k / ZrO2 / HfSiON / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 1, ICD2007-4, pp. 17-22, April 2007.
Paper # ICD2007-4 
Date of Issue 2007-04-05 (ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee ICD  
Conference Date 2007-04-12 - 2007-04-13 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ICD 
Conference Code 2007-04-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Device Technology for embedded DRAM utilizing stacked MIM(Metal-Insulator-Metal) Capacitor 
Sub Title (in English)  
Keyword(1) embedded DRAM  
Keyword(2) MIM Capacitor  
Keyword(3) High-k  
Keyword(4) ZrO2  
Keyword(5) HfSiON  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Takaho Tanigawa  
1st Author's Affiliation NEC Electronics Corporation (NECEL)
2nd Author's Name Yasushi Yamagata  
2nd Author's Affiliation NEC Electronics Corporation (NECEL)
3rd Author's Name Hiroki Shirai  
3rd Author's Affiliation NEC Electronics Corporation (NECEL)
4th Author's Name Hirotoshi Sugimura  
4th Author's Affiliation NEC Electronics Corporation (NECEL)
5th Author's Name Tomoko Wake  
5th Author's Affiliation NEC Electronics Corporation (NECEL)
6th Author's Name Ken Inoue  
6th Author's Affiliation NEC Electronics Corporation (NECEL)
7th Author's Name Takashi Sakoh  
7th Author's Affiliation NEC Electronics Corporation (NECEL)
8th Author's Name Masato Sakao  
8th Author's Affiliation NEC Electronics Corporation (NECEL)
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Speaker Author-1 
Date Time 2007-04-12 10:40:00 
Presentation Time 30 minutes 
Registration for ICD 
Paper # ICD2007-4 
Volume (vol) vol.107 
Number (no) no.1 
Page pp.17-22 
#Pages 6 
Date of Issue 2007-04-05 (ICD) 

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