| Paper Abstract and Keywords |
| Presentation |
2007-04-13 13:00
[Invited Talk]
High Speed Unipolar Switching Resistance RAM (RRAM) Technology Yasunari Hosoi, Yukio Tamai, T. Ohnishi, K. Ishihara, T. Shibuya, Y. Inoue, S. Yamazaki, T.Nakano, Shigeo Ohnishi, Nobuyoshi Awaya (Sharp), I. H. Inoue, Hisashi Shima (AIST(NEDO)), Hiroyuki Akinaga, Hidenori Takagi, Hiroshi Akoh (AIST(CERC)) ICD2007-14 |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
We have successfully achieved high speed (~50 ns) unipolar operation in RRAM devices comprised of titanium oxynitride (TiON) combined with a control resistor connected in series. For unipolar switching, programming and erasing pulses can be the same width, typically, a few tens of nano-seconds. This enables high speed and high density cross-point RRAM memory arrays. In addition, we make clear why conventional unipolar switching mode cannot achieve high speed. Moreover, we demonstrate how switching characteristics can be controlled by a series-connected load resistor. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
RRAM / unipolar / high Speed / load resistor / series resistor / 1D1R / cross point / TiON |
| Reference Info. |
IEICE Tech. Rep., vol. 107, no. 1, ICD2007-14, pp. 77-82, April 2007. |
| Paper # |
ICD2007-14 |
| Date of Issue |
2007-04-05 (ICD) |
| ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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| Download PDF |
ICD2007-14 |