Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2007-04-20 13:00
Ge Dependent Oxidation Process in SiGe/SOI Structures
Masanori Tanaka, Tatsuo Ohka, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) ED2007-1 SDM2007-1 OME2007-1
Abstract (in Japanese) (See Japanese page) 
(in English) Oxidation of SiGe/SOI structures was investigated at wide-ranging temperature. Different oxidation characteristics were observed at low (<680 ^{o}C), middle (700-800 ^{o}C), and high (>800 ^{o}C) temperatures. At low (<680 ^{o}C) temperatures, formed SiO_{2} thickness was thin (<50 nm). Thus, oxidation rate was limited by reaction at SiO2/SiGe interfaces and piled-up Ge was little i.e., Ge fraction at the interface was almost the same as the initial Ge fraction. Therefore, initial Ge fraction dependent enhanced oxidation was observed. On the other hand, at high (>800 ^{o}C) temperatures, SiO_{2} thickness was thick (>100 nm). Thus, oxidation rate was limited by diffusion of oxygen in SiO_{2}. Therefore, oxidation rate does not depend on the Ge fraction. At middle temperatures (700~800 ^{o}C), oxidation rate does not depend on the temperature for the samples with high initial Ge fraction (>20%). This is due to that increase in oxidation rate by increasing temperature was cancelled by the retardation of oxidation by high Ge piled-up fraction (>50 %).
Keyword (in Japanese) (See Japanese page) 
(in English) strained Si / SiGe / oxidation / / / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 14, SDM2007-1, pp. 1-4, April 2007.
Paper # SDM2007-1 
Date of Issue 2007-04-13 (ED, SDM, OME) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2007-1 SDM2007-1 OME2007-1

Conference Information
Committee OME SDM ED  
Conference Date 2007-04-20 - 2007-04-20 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2007-04-OME-SDM-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Ge Dependent Oxidation Process in SiGe/SOI Structures 
Sub Title (in English)  
Keyword(1) strained Si  
Keyword(2) SiGe  
Keyword(3) oxidation  
Keyword(4)  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Masanori Tanaka  
1st Author's Affiliation Kyushu University (Kyushu Univ.)
2nd Author's Name Tatsuo Ohka  
2nd Author's Affiliation Kyushu University (Kyushu Univ.)
3rd Author's Name Taizoh Sadoh  
3rd Author's Affiliation Kyushu University (Kyushu Univ.)
4th Author's Name Masanobu Miyao  
4th Author's Affiliation Kyushu University (Kyushu Univ.)
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2007-04-20 13:00:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # ED2007-1, SDM2007-1, OME2007-1 
Volume (vol) vol.107 
Number (no) no.13(ED), no.14(SDM), no.15(OME) 
Page pp.1-4 
#Pages 4 
Date of Issue 2007-04-13 (ED, SDM, OME) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan