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| Presentation | 2007-06-07 13:55 Electron Trap Characteristics of Si3N4/SRN/Si3N4 stacked films Toshiyuki Mine, Takeshi Ishida, Hirotaka Hamamura, Kazuyoshi Torii (Hitachi)  SDM2007-32 Link to ES Tech. Rep. Archives: SDM2007-32 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | For the purpose of providing higher reliability to MONOS (Metal-Oxide-Nitride-Oxide-Silicon) type nonvolatile memory, we have investigated an electron capture characteristic, a retention characteristic of the MONOS structure with SRN（Si-rich nitride） films. Electrons are mainly captured at a top and bottom interface of SRN films, which is same electron-capture distribution as the MONOS structure with Si3N4 film. However, a high-temperature retention characteristic of the MONOS structure with SRN film degraded remarkably as compared with that with Si3N4 film. Based on these findings, we proposed the MONOS structure with Si3N4/SRN/Si3N4 which can provide both an increase in P/E cycles and a sufficient retention characteristic. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | MONOS / SRN / Trap / Retention / Avalanche injection / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 107, no. 85, SDM2007-32, pp. 7-11, June 2007. | |
| Paper # | SDM2007-32 | |
| Date of Issue | 2007-05-31 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2007-32 Link to ES Tech. Rep. Archives: SDM2007-32 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2007-06-07 - 2007-06-08 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Hiroshima Univ. ( Faculty Club) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Sci. & Technol. for Thin Dielectrics for MIS Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2007-06-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electron Trap Characteristics of Si3N4/SRN/Si3N4 stacked films |
| Sub Title (in English) | |
| Keyword(1) | MONOS |
| Keyword(2) | SRN |
| Keyword(3) | Trap |
| Keyword(4) | Retention |
| Keyword(5) | Avalanche injection |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Toshiyuki Mine |
| 1st Author's Affiliation | Hitachi, Ltd., Central Research Laboratory (Hitachi) |
| 2nd Author's Name | Takeshi Ishida |
| 2nd Author's Affiliation | Hitachi, Ltd., Central Research Laboratory (Hitachi) |
| 3rd Author's Name | Hirotaka Hamamura |
| 3rd Author's Affiliation | Hitachi, Ltd., Central Research Laboratory (Hitachi) |
| 4th Author's Name | Kazuyoshi Torii |
| 4th Author's Affiliation | Hitachi, Ltd., Central Research Laboratory (Hitachi) |
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| Speaker | Author-1 |
| Date Time | 2007-06-07 13:55:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2007-32 |
| Volume (vol) | vol.107 |
| Number (no) | no.85 |
| Page | pp.7-11 |
| #Pages | 5 |
| Date of Issue | 2007-05-31 (SDM) |
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