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Paper Abstract and Keywords
Presentation 2007-06-07 16:45
Effects of High-Pressure H2O Vapor annealing on SiO2/4H-SiC Interface Properties and MOSFET Performance
Hiroshi Yano, Daisuke Takeda, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki (NAIST) SDM2007-38
Abstract (in Japanese) (See Japanese page) 
(in English) High-pressure H2O vapor annealing was performed for 4H-SiC MOS structures to modify interface properties and MOSFET performance. Effect of high-pressure H2O vapor annealing was different for the MOS structures with/without Al gate electrodes on SiO2. Interface properties were improved by annealing at 390oC under 1.6MPa in H2O vapor. Channel mobility of Si-face MOSFETs was increased from 3.6 to 5.0 cm2/Vs after annealing without Al gate electrodes. However, no improvement was observed for MOSFETs annealed with Al gate electrodes. Mechanism of high-pressure H2O vapor annealing was discussed.
Keyword (in Japanese) (See Japanese page) 
(in English) 4H-SiC / MOS interface / MOSFET / high-pressure H2O vapor anneal / interface state / fixed charge / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 85, SDM2007-38, pp. 37-42, June 2007.
Paper # SDM2007-38 
Date of Issue 2007-05-31 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2007-38

Conference Information
Committee SDM  
Conference Date 2007-06-07 - 2007-06-08 
Place (in Japanese) (See Japanese page) 
Place (in English) Hiroshima Univ. ( Faculty Club) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Sci. & Technol. for Thin Dielectrics for MIS Devices 
Paper Information
Registration To SDM 
Conference Code 2007-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Effects of High-Pressure H2O Vapor annealing on SiO2/4H-SiC Interface Properties and MOSFET Performance 
Sub Title (in English)  
Keyword(1) 4H-SiC  
Keyword(2) MOS interface  
Keyword(3) MOSFET  
Keyword(4) high-pressure H2O vapor anneal  
Keyword(5) interface state  
Keyword(6) fixed charge  
Keyword(7)  
Keyword(8)  
1st Author's Name Hiroshi Yano  
1st Author's Affiliation Nara Institute of Science and Technology (NAIST)
2nd Author's Name Daisuke Takeda  
2nd Author's Affiliation Nara Institute of Science and Technology (NAIST)
3rd Author's Name Tomoaki Hatayama  
3rd Author's Affiliation Nara Institute of Science and Technology (NAIST)
4th Author's Name Yukiharu Uraoka  
4th Author's Affiliation Nara Institute of Science and Technology (NAIST)
5th Author's Name Takashi Fuyuki  
5th Author's Affiliation Nara Institute of Science and Technology (NAIST)
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Speaker Author-1 
Date Time 2007-06-07 16:45:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2007-38 
Volume (vol) vol.107 
Number (no) no.85 
Page pp.37-42 
#Pages 6 
Date of Issue 2007-05-31 (SDM) 

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