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Paper Abstract and Keywords
Presentation 2007-06-08 09:00
Study on subnitride and valence band offset at Si3N4 / Si interface formed using nitrogen radicals
Akinobu Teramoto, Takashi Aratani, Masaaki Higuchi (Tohoku Univ.), Eiji Ikenaga (JASRI), Hiroshi Nohira (Musashi Institute of Technology), Shigetoshi Sugawa, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.) SDM2007-39
Abstract (in Japanese) (See Japanese page) 
(in English) An area density of subnitride and a valence band offset in Si3N4 films formed on Si(100), (111), (110) surface by microwave excited Xe/NH3 plasma are evaluated using Si 2p spectra emitted by soft X-ray (wave length=1050 eV) and the spectra of the valence band for escape angle of 15º and 80º emitted by soft X-ray (wave length=951 eV), respectively. The density of subnitride decreases with an increase in the surface area density of Si atoms. The energy offsets of balance band for Si3N4 formed by the radical nitridation are the same for every Si surface orientation.
Keyword (in Japanese) (See Japanese page) 
(in English) silicon nitride film / subnitride / interface / XPS / / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 85, SDM2007-39, pp. 43-48, June 2007.
Paper # SDM2007-39 
Date of Issue 2007-05-31 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2007-06-07 - 2007-06-08 
Place (in Japanese) (See Japanese page) 
Place (in English) Hiroshima Univ. ( Faculty Club) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Sci. & Technol. for Thin Dielectrics for MIS Devices 
Paper Information
Registration To SDM 
Conference Code 2007-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Study on subnitride and valence band offset at Si3N4 / Si interface formed using nitrogen radicals 
Sub Title (in English)  
Keyword(1) silicon nitride film  
Keyword(2) subnitride  
Keyword(3) interface  
Keyword(4) XPS  
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1st Author's Name Akinobu Teramoto  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Takashi Aratani  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Masaaki Higuchi  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Eiji Ikenaga  
4th Author's Affiliation Japan Synchrotron Radiation Research Institute (JASRI)
5th Author's Name Hiroshi Nohira  
5th Author's Affiliation Musashi Institute of Technology (Musashi Institute of Technology)
6th Author's Name Shigetoshi Sugawa  
6th Author's Affiliation Tohoku University (Tohoku Univ.)
7th Author's Name Tadahiro Ohmi  
7th Author's Affiliation Tohoku University (Tohoku Univ.)
8th Author's Name Takeo Hattori  
8th Author's Affiliation Tohoku University (Tohoku Univ.)
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Speaker Author-1 
Date Time 2007-06-08 09:00:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2007-39 
Volume (vol) vol.107 
Number (no) no.85 
Page pp.43-48 
#Pages 6 
Date of Issue 2007-05-31 (SDM) 

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