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Paper Abstract and Keywords
Presentation 2007-06-08 09:25
Effect of Nitrogen Profile and Fluorine Incorporation on Negative-bias Temperature Instability of Ultrathin Plasma-nitrided SiON MOSFETs
Masayuki Terai, Shinji Fujieda (NEC) SDM2007-40
Abstract (in Japanese) (See Japanese page) 
(in English) The effects of plasma nitridation and fluorine incorporation on the components of negative-bias temperature instability (NBTI) in p-type MOSFETs with plasma-nitrided SiON gates were investigated. To clarify these effects, NBTI-induced threshold-voltage shift was separated into two components: one for generation of traps at the SiON/Si-substrate interface and one for positive charges within the SiON bulk. It was found that the proportions of the interface and bulk components can be controlled with plasma-nitridation method: the bulk component was increased by RF-plasma nitridation, while the interface component was dominant in the case of ECR-plasma nitridation. Lowering the nitrogen concentration near the SiON/Si-substrate interface decreased the interface component. Lowering the nitrogen concentration near the poly-Si/SiON interface did not decrease NBTI, while it decreased positive oxide charges in the as-fabricated MOSFETs. Furthermore, it was demonstrated that the fluorine incorporation decreases the interface component in plasma-nitrided SiON gates, while it does not decrease the bulk component.
Keyword (in Japanese) (See Japanese page) 
(in English) CMOS / Remote plasma nitridation / RPN / Oxinitride / SiON / NBTI / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 85, SDM2007-40, pp. 49-54, June 2007.
Paper # SDM2007-40 
Date of Issue 2007-05-31 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2007-06-07 - 2007-06-08 
Place (in Japanese) (See Japanese page) 
Place (in English) Hiroshima Univ. ( Faculty Club) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Sci. & Technol. for Thin Dielectrics for MIS Devices 
Paper Information
Registration To SDM 
Conference Code 2007-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Effect of Nitrogen Profile and Fluorine Incorporation on Negative-bias Temperature Instability of Ultrathin Plasma-nitrided SiON MOSFETs 
Sub Title (in English)  
Keyword(1) CMOS  
Keyword(2) Remote plasma nitridation  
Keyword(3) RPN  
Keyword(4) Oxinitride  
Keyword(5) SiON  
Keyword(6) NBTI  
Keyword(7)  
Keyword(8)  
1st Author's Name Masayuki Terai  
1st Author's Affiliation NEC (NEC)
2nd Author's Name Shinji Fujieda  
2nd Author's Affiliation NEC (NEC)
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Speaker Author-1 
Date Time 2007-06-08 09:25:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2007-40 
Volume (vol) vol.107 
Number (no) no.85 
Page pp.49-54 
#Pages 6 
Date of Issue 2007-05-31 (SDM) 

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