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Paper Abstract and Keywords
Presentation 2007-06-08 11:20
Effects of Nitrogen Incorporaton into La2O3 using Nitrogen Radicals
Soshi Sato, Kiichi Tachi, Jaeyeol Song, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai (Tokyo Tech.) SDM2007-44
Abstract (in Japanese) (See Japanese page) 
(in English) This work reports the influence of nitridation on structural and electrical properties of La2O3 gate dielectric films. The issue of La2O3 is increase in EOT by high temperature post metarization annealing (PMA). To overcome this problem, we incorporated nitrogen in La2O3. The increase in EOT observed for the TaN/LaON and W/LaON structure is reduced compared with that observed for the W/La2O3 structure. This must be caused by nitrogen in LaON and SiNx-rich interfacial layer which seems to remain after annealing at high temperature. nMOSFET consisting of W/LaON/Si is also successfully fabricated. Peak electron mobility of 96.2 cm2/V s was obtained.
Keyword (in Japanese) (See Japanese page) 
(in English) lanthanum oxide / nitrogen radicals / X-ray Photoelectron Spectroscopy / / / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 85, SDM2007-44, pp. 71-74, June 2007.
Paper # SDM2007-44 
Date of Issue 2007-05-31 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2007-06-07 - 2007-06-08 
Place (in Japanese) (See Japanese page) 
Place (in English) Hiroshima Univ. ( Faculty Club) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Sci. & Technol. for Thin Dielectrics for MIS Devices 
Paper Information
Registration To SDM 
Conference Code 2007-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Effects of Nitrogen Incorporaton into La2O3 using Nitrogen Radicals 
Sub Title (in English) * 
Keyword(1) lanthanum oxide  
Keyword(2) nitrogen radicals  
Keyword(3) X-ray Photoelectron Spectroscopy  
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1st Author's Name Soshi Sato  
1st Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
2nd Author's Name Kiichi Tachi  
2nd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
3rd Author's Name Jaeyeol Song  
3rd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
4th Author's Name Kuniyuki Kakushima  
4th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
5th Author's Name Parhat Ahmet  
5th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
6th Author's Name Kazuo Tsutsui  
6th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
7th Author's Name Nobuyuki Sugii  
7th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
8th Author's Name Takeo Hattori  
8th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
9th Author's Name Hiroshi Iwai  
9th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
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Speaker Author-1 
Date Time 2007-06-08 11:20:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2007-44 
Volume (vol) vol.107 
Number (no) no.85 
Page pp.71-74 
#Pages 4 
Date of Issue 2007-05-31 (SDM) 

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