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Paper Abstract and Keywords
Presentation 2007-06-08 14:15
Evaluation of Thermal Stability of HfO2/SiONx/Ge(100) Stacked Structures using by Photoemission Spectroscopy
Akio Ohta, Hiroshi Nakagawa, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) SDM2007-48
Abstract (in Japanese) (See Japanese page) 
(in English) ~2.7nm-thick HfO2 films were formed by electron beam (EB) evaporation in O2 ambience on ultrathin SiONx/Ge(100) stack structure fabricated by NH3-anneal at 600°C for the HF-last Si on Ge(100) and the impact of post deposition annealing (PDA) on chemical bonding features for this stack structure was evaluated by X-ray photoelectron spectroscopy (XPS). We found that the ultrathin SiONx/Ge(100) surface was stable against annealing at 550ºC in ultra-high vacuum(UHV) ambience (~1x10-6Pa) and at 500°C in O2 ambience (~38Pa). For the HfO2(~2.7nm)/SiON(~1.2nm)/Ge(100) stack structure, Ge atom diffusion into the HfO2/SiON layer was hardly detected by the PDA at 450ºC in N2 ambience (~29Pa). In the case of O2 ambience (~31Pa), Ge atom diffused and incorporated into the HfO2/SiON layer, and result in the formation of GeOx layer in the region near the top of sample surface.
Keyword (in Japanese) (See Japanese page) 
(in English) high-k / HfO2 / SiONx / Ge(100) / X-ray Photoelectron Spectroscopy (XPS) / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 85, SDM2007-48, pp. 91-96, June 2007.
Paper # SDM2007-48 
Date of Issue 2007-05-31 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2007-06-07 - 2007-06-08 
Place (in Japanese) (See Japanese page) 
Place (in English) Hiroshima Univ. ( Faculty Club) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Sci. & Technol. for Thin Dielectrics for MIS Devices 
Paper Information
Registration To SDM 
Conference Code 2007-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Evaluation of Thermal Stability of HfO2/SiONx/Ge(100) Stacked Structures using by Photoemission Spectroscopy 
Sub Title (in English)  
Keyword(1) high-k  
Keyword(2) HfO2  
Keyword(3) SiONx  
Keyword(4) Ge(100)  
Keyword(5) X-ray Photoelectron Spectroscopy (XPS)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Akio Ohta  
1st Author's Affiliation Hiroshima University (Hiroshima Univ.)
2nd Author's Name Hiroshi Nakagawa  
2nd Author's Affiliation Hiroshima University (Hiroshima Univ.)
3rd Author's Name Hideki Murakami  
3rd Author's Affiliation Hiroshima University (Hiroshima Univ.)
4th Author's Name Seiichiro Higashi  
4th Author's Affiliation Hiroshima University (Hiroshima Univ.)
5th Author's Name Seiichi Miyazaki  
5th Author's Affiliation Hiroshima University (Hiroshima Univ.)
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Speaker Author-1 
Date Time 2007-06-08 14:15:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2007-48 
Volume (vol) vol.107 
Number (no) no.85 
Page pp.91-96 
#Pages 6 
Date of Issue 2007-05-31 (SDM) 

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