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Paper Abstract and Keywords
Presentation 2007-06-15 15:50
DC characteristics of HBT with buried SiO2 wires in collector
Shinnosuke Takahashi, Tsukasa Miura, Hiroaki Yamashita (Tokyo Tech), Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Tech/JST-CREST) ED2007-37
Abstract (in Japanese) (See Japanese page) 
(in English) The HBT with buried SiO2 in InP collector has low Base-Collector Capacitance(CBC). Therefore this HBT is expected high speed operation. In equivalent circuit analysis, HBT with buried SiO2 wires of thickness 200nm in collector exhibit two times increase in fmax. SiO2 wires of width 310nm and thickness 200nm were buried in InP Sub-collector and collector. To observe influence on epitaxial crystal growth by insertion of SiO2 wires through leak current and current gain in HBT, HBT with buried SiO2 wires in collector was fabricated and evaluated by DC characteristics. This HBT exhibited the almost same characteristics compared with conventional HBT.
Keyword (in Japanese) (See Japanese page) 
(in English) HBT / MOVPE / regrowth / InP / Base-Collector capacitance / SiO2 wires / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 95, ED2007-37, pp. 33-37, June 2007.
Paper # ED2007-37 
Date of Issue 2007-06-08 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2007-37

Conference Information
Committee ED  
Conference Date 2007-06-15 - 2007-06-16 
Place (in Japanese) (See Japanese page) 
Place (in English) Toyama Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Compound Semiconductor Process, Device, etc 
Paper Information
Registration To ED 
Conference Code 2007-06-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) DC characteristics of HBT with buried SiO2 wires in collector 
Sub Title (in English)  
Keyword(1) HBT  
Keyword(2) MOVPE  
Keyword(3) regrowth  
Keyword(4) InP  
Keyword(5) Base-Collector capacitance  
Keyword(6) SiO2 wires  
Keyword(7)  
Keyword(8)  
1st Author's Name Shinnosuke Takahashi  
1st Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
2nd Author's Name Tsukasa Miura  
2nd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
3rd Author's Name Hiroaki Yamashita  
3rd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
4th Author's Name Yasuyuki Miyamoto  
4th Author's Affiliation Tokyo Institute of Technology/JST-CREST (Tokyo Tech/JST-CREST)
5th Author's Name Kazuhito Furuya  
5th Author's Affiliation Tokyo Institute of Technology/JST-CREST (Tokyo Tech/JST-CREST)
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Speaker Author-1 
Date Time 2007-06-15 15:50:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2007-37 
Volume (vol) vol.107 
Number (no) no.95 
Page pp.33-37 
#Pages 5 
Date of Issue 2007-06-08 (ED) 

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