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Paper Abstract and Keywords
Presentation 2007-06-16 11:00
Ion-Implanted GaN/AlGaN/GaN HEMTs with Extremely Low Gate Leakage Current
Kazuki Nomoto, Taku Tajima (Hosei Univ.), Tomoyoshi Mishima (Hitachi Cable Ltd.), Masataka Satoh, Tohru Nakamura (Hosei Univ.) ED2007-44
Abstract (in Japanese) (See Japanese page) 
(in English) We were demonstrated the realization of compatibility of extremely low gate leakage current and low source resistance with Si ion-implanted GaN/AlGaN/GaN surface-stabilized high-electron mobility transistor (HEMT) without any recess etching process. The source/drain regions were formed using Si ion implantation into undoped GaN/AlGaN/GaN on sapphire substrate. Using ion implantation into source/drain regions with energy of 80 keV, the performances were significantly improved. On-resistance reduced from 26.2 to 4.2 Ω•mm. Saturation drain current and maximum transconductance increased from 284 to 723 mA/mm and from 48 to 147 mS/mm.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN/AlGaN/GaN / Ion Implantation / HEMT / / / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 95, ED2007-44, pp. 71-74, June 2007.
Paper # ED2007-44 
Date of Issue 2007-06-08 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2007-44

Conference Information
Committee ED  
Conference Date 2007-06-15 - 2007-06-16 
Place (in Japanese) (See Japanese page) 
Place (in English) Toyama Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Compound Semiconductor Process, Device, etc 
Paper Information
Registration To ED 
Conference Code 2007-06-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Ion-Implanted GaN/AlGaN/GaN HEMTs with Extremely Low Gate Leakage Current 
Sub Title (in English)  
Keyword(1) GaN/AlGaN/GaN  
Keyword(2) Ion Implantation  
Keyword(3) HEMT  
Keyword(4)  
Keyword(5)  
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1st Author's Name Kazuki Nomoto  
1st Author's Affiliation Department of EECE and Research Center for Micro-Nano Technology, Hosei University (Hosei Univ.)
2nd Author's Name Taku Tajima  
2nd Author's Affiliation Department of EECE and Research Center for Micro-Nano Technology, Hosei University (Hosei Univ.)
3rd Author's Name Tomoyoshi Mishima  
3rd Author's Affiliation R&D Group, Hitachi Cable Ltd. (Hitachi Cable Ltd.)
4th Author's Name Masataka Satoh  
4th Author's Affiliation Department of EECE and Research Center for Micro-Nano Technology, Hosei University (Hosei Univ.)
5th Author's Name Tohru Nakamura  
5th Author's Affiliation Department of EECE and Research Center for Micro-Nano Technology, Hosei University (Hosei Univ.)
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Speaker Author-1 
Date Time 2007-06-16 11:00:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2007-44 
Volume (vol) vol.107 
Number (no) no.95 
Page pp.71-74 
#Pages 4 
Date of Issue 2007-06-08 (ED) 

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