Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2007-06-16 10:10
Anodic oxidation on n-GaN surface using photoelectrochemical process
Nanako Shiozaki, Tamotsu Hashizume (Hokkaido Univ.) ED2007-42
Abstract (in Japanese) (See Japanese page) 
(in English) This paper reports the feasibility of oxidation on n-GaN surface using photoelectrochemical process in a mixed solution with glycol solution. The sample was immersed into the mixed solution with tartaric acid and propylene glycol. Then, bias voltage was applied on the surface under UV illumination. The XPS measurement revealed the surface was oxidized to form the gallium oxide. The quality of the surface and layer varied according to the conditions such as processing time and bias voltage. When the combination of the ramp and constant bias form was used as applied voltage, the photoluminescence on the processed surface presented the 3-times increase in intensity.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / anodic oxidation / photoelectrochemical / gallium oxide / / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 95, ED2007-42, pp. 61-65, June 2007.
Paper # ED2007-42 
Date of Issue 2007-06-08 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2007-42

Conference Information
Committee ED  
Conference Date 2007-06-15 - 2007-06-16 
Place (in Japanese) (See Japanese page) 
Place (in English) Toyama Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Compound Semiconductor Process, Device, etc 
Paper Information
Registration To ED 
Conference Code 2007-06-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Anodic oxidation on n-GaN surface using photoelectrochemical process 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) anodic oxidation  
Keyword(3) photoelectrochemical  
Keyword(4) gallium oxide  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Nanako Shiozaki  
1st Author's Affiliation Graduate School of Information Science and Technology, Research Center for Integrated Quantum Electronics, Hokkaido University (Hokkaido Univ.)
2nd Author's Name Tamotsu Hashizume  
2nd Author's Affiliation Graduate School of Information Science and Technology, Research Center for Integrated Quantum Electronics, Hokkaido University (Hokkaido Univ.)
3rd Author's Name  
3rd Author's Affiliation ()
4th Author's Name  
4th Author's Affiliation ()
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2007-06-16 10:10:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2007-42 
Volume (vol) vol.107 
Number (no) no.95 
Page pp.61-65 
#Pages 5 
Date of Issue 2007-06-08 (ED) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan