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Paper Abstract and Keywords
Presentation 2007-06-16 10:35
Surface passivation of AlGaN/GaN HFETs by RF magnetron sputtering using AlN target
Nariaki Tanaka (JAIST), Yasunobu Sumida (POWDEC), Toshi-kazu Suzuki (JAIST) ED2007-43
Abstract (in Japanese) (See Japanese page) 
(in English) We have investigated AlN surface passivation for AlGaN/GaN heterojunction field-effect transistors (HFETs). After the formation of passivation films by RF magnetron sputtering using AlN target, increases in the channel sheet resistance due to the process damage are observed. However, this damage can be eliminated by thermal annealing in $ \rm N_2 $ ambient. The resultant devices exhibit increases in the drain current and the transconductance, which are more prominent for thicker AlN films. This indicates that the AlN films cause not only the surface passivation effects but also improvements in thermal management.
Keyword (in Japanese) (See Japanese page) 
(in English) AlGaN/GaN HFET / AlN passivation / process damage / / / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 95, ED2007-43, pp. 67-70, June 2007.
Paper # ED2007-43 
Date of Issue 2007-06-08 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2007-43

Conference Information
Committee ED  
Conference Date 2007-06-15 - 2007-06-16 
Place (in Japanese) (See Japanese page) 
Place (in English) Toyama Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Compound Semiconductor Process, Device, etc 
Paper Information
Registration To ED 
Conference Code 2007-06-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Surface passivation of AlGaN/GaN HFETs by RF magnetron sputtering using AlN target 
Sub Title (in English)  
Keyword(1) AlGaN/GaN HFET  
Keyword(2) AlN passivation  
Keyword(3) process damage  
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1st Author's Name Nariaki Tanaka  
1st Author's Affiliation Japan Advanced Institute of Science and Technology (JAIST)
2nd Author's Name Yasunobu Sumida  
2nd Author's Affiliation POWDEC K.K. (POWDEC)
3rd Author's Name Toshi-kazu Suzuki  
3rd Author's Affiliation Japan Advanced Institute of Science and Technology (JAIST)
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Speaker Author-1 
Date Time 2007-06-16 10:35:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2007-43 
Volume (vol) vol.107 
Number (no) no.95 
Page pp.67-70 
#Pages 4 
Date of Issue 2007-06-08 (ED) 

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