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Paper Abstract and Keywords
Presentation 2007-08-24 15:15
SPRAM (SPin-transfer torque RAM) with a synthetic ferrimagnetic free layer for suppressing read disturbance and write-current dispersion
Katsuya Miura, Takayuki Kawahara, Riichiro Takemura (Hitachi, Ltd.), Jun Hayakawa (Hitachi, Ltd./Tohoku Univ.), Michihiko Yamanouchi (Hitachi, Ltd.), Shoji Ikeda, Ryutaro Sasaki (Tohoku Univ.), Kenchi Ito, Hiromasa Takahashi, Hideyuki Matsuoka (Hitachi, Ltd.), Hideo Ohno (Tohoku Univ.) SDM2007-166 ICD2007-94 Link to ES Tech. Rep. Archives: SDM2007-166 ICD2007-94
Abstract (in Japanese) (See Japanese page) 
(in English) SPin-transfer torque RAM (SPRAM) with MgO-barrier-based magnetic tunnel junctions (MTJs) is a promising candidate for a future universal memory due to its non-volatility, high-speed operation and low power consumption. The read disturbance and the write-current dispersion of an MTJ could be suppressed by adopting a free layer with high thermal stability. We found that SPRAM with SyF free layer demonstrates the secure reading and writing and achieves the high-speed reading faster than 1.5 ns.
Keyword (in Japanese) (See Japanese page) 
(in English) Universal memory / non-volatile RAM / low power RAM / spin-transfer torque / TMR / Synthetic ferrimagnetic free layer / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 194, SDM2007-166, pp. 135-138, Aug. 2007.
Paper # SDM2007-166 
Date of Issue 2007-08-16 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Conference Information
Committee ICD SDM  
Conference Date 2007-08-23 - 2007-08-24 
Place (in Japanese) (See Japanese page) 
Place (in English) Kitami Institute of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) VLSI Circuit and Device Technologies (High Speed, Low Voltage, and Low Power Consumption) 
Paper Information
Registration To SDM 
Conference Code 2007-08-ICD-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) SPRAM (SPin-transfer torque RAM) with a synthetic ferrimagnetic free layer for suppressing read disturbance and write-current dispersion 
Sub Title (in English)  
Keyword(1) Universal memory  
Keyword(2) non-volatile RAM  
Keyword(3) low power RAM  
Keyword(4) spin-transfer torque  
Keyword(5) TMR  
Keyword(6) Synthetic ferrimagnetic free layer  
Keyword(7)  
Keyword(8)  
1st Author's Name Katsuya Miura  
1st Author's Affiliation Advanced Research Laboratory, Hitachi, Ltd. (Hitachi, Ltd.)
2nd Author's Name Takayuki Kawahara  
2nd Author's Affiliation Central Research Laboratory, Hitachi, Ltd. (Hitachi, Ltd.)
3rd Author's Name Riichiro Takemura  
3rd Author's Affiliation Central Research Laboratory, Hitachi, Ltd. (Hitachi, Ltd.)
4th Author's Name Jun Hayakawa  
4th Author's Affiliation Advanced Research Laboratory, Hitachi, Ltd. /RIEC, Tohoku University (Hitachi, Ltd./Tohoku Univ.)
5th Author's Name Michihiko Yamanouchi  
5th Author's Affiliation Advanced Research Laboratory, Hitachi, Ltd. (Hitachi, Ltd.)
6th Author's Name Shoji Ikeda  
6th Author's Affiliation RIEC, Tohoku University (Tohoku Univ.)
7th Author's Name Ryutaro Sasaki  
7th Author's Affiliation RIEC, Tohoku University (Tohoku Univ.)
8th Author's Name Kenchi Ito  
8th Author's Affiliation Advanced Research Laboratory, Hitachi, Ltd. (Hitachi, Ltd.)
9th Author's Name Hiromasa Takahashi  
9th Author's Affiliation Central Research Laboratory, Hitachi, Ltd., Advanced Research Laboratory, Hitachi, Ltd. (Hitachi, Ltd.)
10th Author's Name Hideyuki Matsuoka  
10th Author's Affiliation Advanced Research Laboratory, Hitachi, Ltd. (Hitachi, Ltd.)
11th Author's Name Hideo Ohno  
11th Author's Affiliation RIEC, Tohoku University (Tohoku Univ.)
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Speaker Author-1 
Date Time 2007-08-24 15:15:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2007-166, ICD2007-94 
Volume (vol) vol.107 
Number (no) no.194(SDM), no.195(ICD) 
Page pp.135-138 
#Pages
Date of Issue 2007-08-16 (SDM, ICD) 


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