Paper Abstract and Keywords |
Presentation |
2007-09-20 16:10
Study on interfaces between insulator and active layer, and between active layer and electrodes in n-type organic field effect transistor Shohei Fukuda, Hirotake Kajii (Osaka Univ.), Toshiyuki Ogata, Motoki Takahashi (Tokyo Ohka), Yutaka Ohmori (Osaka Univ.) OME2007-29 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
The interface effects of insulator/active layer and active layer/electrode in solution-processed n-type organic field-effect transistors (OFETs) using [6,6]-phenyl C61-butyric acid methyl ester (PCBM) were investigated. Cesium fluoride (CsF) insertion at the active layer/electrode interface induces a large threshold voltage shift, and realizes low-gate-voltage operation. The threshold voltage shift followed by the insertion of CsF is mainly caused by the efficient electron injection due to the coexistence of CsF and a metal electrode. We also investigated the characteristics of OFETs using poly(p-silsequioxane) (PSQ) derivatives, which contain various amounts of phenol groups with OH in the side chain of their molecular structures. It is found that the field-effect mobility increases with decreasing phenol group ratio in their side chain. The mobility of the device with PSQ containing a phenol group ratio in a half of the side chain of molecular structures is 0.024cm$^2$V${}^{-1}$s${}^{-1}$, which is twice of that in all side chains. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
organic field-effect transistor / CsF / hydroxyl / phenol group / PCBM / silsesquioxane / / |
Reference Info. |
IEICE Tech. Rep., vol. 107, no. 217, OME2007-29, pp. 33-37, Sept. 2007. |
Paper # |
OME2007-29 |
Date of Issue |
2007-09-13 (OME) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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OME2007-29 |
Conference Information |
Committee |
OME |
Conference Date |
2007-09-20 - 2007-09-20 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
KARC, NICT |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Organic New Materials, etc. |
Paper Information |
Registration To |
OME |
Conference Code |
2007-09-OME |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Study on interfaces between insulator and active layer, and between active layer and electrodes in n-type organic field effect transistor |
Sub Title (in English) |
|
Keyword(1) |
organic field-effect transistor |
Keyword(2) |
CsF |
Keyword(3) |
hydroxyl |
Keyword(4) |
phenol group |
Keyword(5) |
PCBM |
Keyword(6) |
silsesquioxane |
Keyword(7) |
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1st Author's Name |
Shohei Fukuda |
1st Author's Affiliation |
Osaka University (Osaka Univ.) |
2nd Author's Name |
Hirotake Kajii |
2nd Author's Affiliation |
Osaka University (Osaka Univ.) |
3rd Author's Name |
Toshiyuki Ogata |
3rd Author's Affiliation |
Tokyo Ohka Kogyo (Tokyo Ohka) |
4th Author's Name |
Motoki Takahashi |
4th Author's Affiliation |
Tokyo Ohka Kogyo (Tokyo Ohka) |
5th Author's Name |
Yutaka Ohmori |
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Osaka University (Osaka Univ.) |
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Speaker |
Author-1 |
Date Time |
2007-09-20 16:10:00 |
Presentation Time |
25 minutes |
Registration for |
OME |
Paper # |
OME2007-29 |
Volume (vol) |
vol.107 |
Number (no) |
no.217 |
Page |
pp.33-37 |
#Pages |
5 |
Date of Issue |
2007-09-13 (OME) |