Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2007-09-28 13:00
SH-SAW propagation characteristics in (11-20) ZnO film/silica glass substrate structures
Atsushi Tanaka (Doshisha Univ.), Takahiko Yanagitani (Tohoku Univ.), Mami Matsukawa, Yoshiaki Watanabe (Doshisha Univ.) US2007-48
Abstract (in Japanese) (See Japanese page) 
(in English) We have reported the fabrication of the (11-20) textured ZnO film without epitaxial technique. An IDT on the (11-20) textured ZnO film can excite SH-SAW. Therefore, the film on various substrates is an attractive option for fabricating the SH-SAW device on a silicon IC, and the device on a curved surface. In this report, the electromechanical coupling coefficients K2 in the ZnO (0º, 90º, ) films/silica glass substrate structures were theoretically estimated. The theoretical results showed that the IDT electrode/ZnO (0º, 90º, 55º) film/silica glass substrate structure had a relatively high K2 value of 3.4 % at H/&#61548=0.21. This structure was then fabricated using RF magnetron sputtering technique. The experimental results demonstrated that SH-SAW was clearly excited in the structure.
Keyword (in Japanese) (See Japanese page) 
(in English) (11-20) textured ZnO film / SH-SAW / RF magnetron sputtering / / / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 233, US2007-48, pp. 31-36, Sept. 2007.
Paper # US2007-48 
Date of Issue 2007-09-21 (US) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF US2007-48

Conference Information
Committee US  
Conference Date 2007-09-27 - 2007-09-28 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) General 
Paper Information
Registration To US 
Conference Code 2007-09-US 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) SH-SAW propagation characteristics in (11-20) ZnO film/silica glass substrate structures 
Sub Title (in English)  
Keyword(1) (11-20) textured ZnO film  
Keyword(2) SH-SAW  
Keyword(3) RF magnetron sputtering  
Keyword(4)  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Atsushi Tanaka  
1st Author's Affiliation Doshisha University (Doshisha Univ.)
2nd Author's Name Takahiko Yanagitani  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Mami Matsukawa  
3rd Author's Affiliation Doshisha University (Doshisha Univ.)
4th Author's Name Yoshiaki Watanabe  
4th Author's Affiliation Doshisha University (Doshisha Univ.)
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2007-09-28 13:00:00 
Presentation Time 30 minutes 
Registration for US 
Paper # US2007-48 
Volume (vol) vol.107 
Number (no) no.233 
Page pp.31-36 
#Pages 6 
Date of Issue 2007-09-21 (US) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan