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Paper Abstract and Keywords
Presentation 2007-10-04 15:15
Nitrogen Profile Study for SiON Gate Dielectrics of Advanced DRAM
Shigemi Murakawa (Tokyo Electron/Tohoku Univ.), Masashi Takeuchi, Minoru Honda, Shu-ichi Ishizuka, Toshio Nakanishi, Yoshihiro Hirota, Takuya Sugawara, Yoshitsugu Tanaka, Yasushi Akasaka (Tokyo Electron AT), Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2007-175
Abstract (in Japanese) (See Japanese page) 
(in English) Nitrogen profile variations were systematically studied for the DRAM plasma nitridation process, using AR-XPS, and their influences to the boron blocking and device performances including NBTI were investigated. The high pressure and high temperature condition of plasma nitridation is preferred for improving the NBTI and the tool productivity. Post nitridation anneal stabilizes the nitrogen profile, and improves the boron blocking performance. Both of re-oxidation and the out-diffusion of nitrogen atoms take place simultaneously near the surface during the queue time after the plasma nitridation. RLSA plasma nitridation is a successful SiON gate insulator formation technology in the manufacturing of DRAM as well as logic devices.
Keyword (in Japanese) (See Japanese page) 
(in English) DRAM / Gate / Insulator / SiON / Plasma / Nitridation / Profile / RLSA  
Reference Info. IEICE Tech. Rep., vol. 107, no. 245, SDM2007-175, pp. 11-14, Oct. 2007.
Paper # SDM2007-175 
Date of Issue 2007-09-27 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2007-10-04 - 2007-10-05 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process Science and Novel Process Technologies 
Paper Information
Registration To SDM 
Conference Code 2007-10-SDM 
Language English (Japanese title is available) 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Nitrogen Profile Study for SiON Gate Dielectrics of Advanced DRAM 
Sub Title (in English)  
Keyword(1) DRAM  
Keyword(2) Gate  
Keyword(3) Insulator  
Keyword(4) SiON  
Keyword(5) Plasma  
Keyword(6) Nitridation  
Keyword(7) Profile  
Keyword(8) RLSA  
1st Author's Name Shigemi Murakawa  
1st Author's Affiliation Tokyo Elecron LTD./Tohoku University (Tokyo Electron/Tohoku Univ.)
2nd Author's Name Masashi Takeuchi  
2nd Author's Affiliation Tokyo Elecron AT LTD. (Tokyo Electron AT)
3rd Author's Name Minoru Honda  
3rd Author's Affiliation Tokyo Elecron AT LTD. (Tokyo Electron AT)
4th Author's Name Shu-ichi Ishizuka  
4th Author's Affiliation Tokyo Elecron AT LTD. (Tokyo Electron AT)
5th Author's Name Toshio Nakanishi  
5th Author's Affiliation Tokyo Elecron AT LTD. (Tokyo Electron AT)
6th Author's Name Yoshihiro Hirota  
6th Author's Affiliation Tokyo Elecron AT LTD. (Tokyo Electron AT)
7th Author's Name Takuya Sugawara  
7th Author's Affiliation Tokyo Electron AT LTD. (Tokyo Electron AT)
8th Author's Name Yoshitsugu Tanaka  
8th Author's Affiliation Tokyo Electron AT LTD. (Tokyo Electron AT)
9th Author's Name Yasushi Akasaka  
9th Author's Affiliation Tokyo Electron AT LTD. (Tokyo Electron AT)
10th Author's Name Akinobu Teramoto  
10th Author's Affiliation Tohoku University (Tohoku Univ.)
11th Author's Name Shigetoshi Sugawa  
11th Author's Affiliation Tohoku University (Tohoku Univ.)
12th Author's Name Tadahiro Ohmi  
12th Author's Affiliation Tohoku University (Tohoku Univ.)
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Speaker Author-1 
Date Time 2007-10-04 15:15:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2007-175 
Volume (vol) vol.107 
Number (no) no.245 
Page pp.11-14 
#Pages 4 
Date of Issue 2007-09-27 (SDM) 

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