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Paper Abstract and Keywords
Presentation 2007-10-04 16:30
Ultrathin HfOxNy gate insulator formations utilizing ECR plasma process
Yusuke Nakano, Masaki Satoh, Shun-ichiro Ohmi (Tokyo Tech) SDM2007-178
Abstract (in Japanese) (See Japanese page) 
(in English) Post deposition annealing (PDA) process such as rapid cooling process was investigated to improve electrical characteristics of HfO$_{x}$N$_{y}$ films formed by ECR Ar/O$_{2}$ plasma oxidation of ultra-thin HfN films. After 1 nm-thick HfN film deposition, high vacuum annealing (HVA, 700$^{o}$C/5 min) and PDA (900$^{o}$C/1 min) were carried out. In this research, a cooling rate after the PDA was shortened by increasing the N$_{2}$ cooling gas flow rate from 0.8 l/min to 100 l/min. A hysteresis in C-V curve was reduced and equivalent oxide thickness (EOT) was decreased from 1.26 nm (N$_{2}$ flow rate: 0.8 l/min) to 0.96 nm (N$_{2}$ flow rate: 100 l/min).
Keyword (in Japanese) (See Japanese page) 
(in English) HfO$_{x}$N$_{y}$ / Electron Cyclotron Resonance (ECR) / Plasma Oxidation / high-k gate insulator / / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 245, SDM2007-178, pp. 19-22, Oct. 2007.
Paper # SDM2007-178 
Date of Issue 2007-09-27 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2007-10-04 - 2007-10-05 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process Science and Novel Process Technologies 
Paper Information
Registration To SDM 
Conference Code 2007-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Ultrathin HfOxNy gate insulator formations utilizing ECR plasma process 
Sub Title (in English)  
Keyword(1) HfO$_{x}$N$_{y}$  
Keyword(2) Electron Cyclotron Resonance (ECR)  
Keyword(3) Plasma Oxidation  
Keyword(4) high-k gate insulator  
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1st Author's Name Yusuke Nakano  
1st Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
2nd Author's Name Masaki Satoh  
2nd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
3rd Author's Name Shun-ichiro Ohmi  
3rd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
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Speaker Author-1 
Date Time 2007-10-04 16:30:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2007-178 
Volume (vol) vol.107 
Number (no) no.245 
Page pp.19-22 
#Pages 4 
Date of Issue 2007-09-27 (SDM) 

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