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Paper Abstract and Keywords
Presentation 2007-10-05 15:25
Shallow Junction Formation Using Combination of LSA and Spike-RTA
Seiichi Endo, Yoshiki Maruyama, Yoji Kawasaki, Tomohiro Yamashita, Hidekazu Oda, Yasuo Inoue (Renesas) SDM2007-191
Abstract (in Japanese) (See Japanese page) 
(in English) In this work, Xj-Rs tradeoffs of BF2-SDE are investigated for several combinations of spike-RTA and LSA, and it is demonstrated that LSA-first process is effective for the control of the gate-SDE overlap with low SDE resistance because dopant impurities are highly activated first by LSA and are diffused by following spike-RTA keeping high-activation. In the case of applying LSA-first process to conventional CMOS process, the drive current of pMOSFET shows 5% improvement.
Keyword (in Japanese) (See Japanese page) 
(in English) ultra shallow junction / spike-RTA / LSA / boron / sheet resistance / SIMS / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 245, SDM2007-191, pp. 61-64, Oct. 2007.
Paper # SDM2007-191 
Date of Issue 2007-09-27 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2007-191

Conference Information
Committee SDM  
Conference Date 2007-10-04 - 2007-10-05 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process Science and Novel Process Technologies 
Paper Information
Registration To SDM 
Conference Code 2007-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Shallow Junction Formation Using Combination of LSA and Spike-RTA 
Sub Title (in English)  
Keyword(1) ultra shallow junction  
Keyword(2) spike-RTA  
Keyword(3) LSA  
Keyword(4) boron  
Keyword(5) sheet resistance  
Keyword(6) SIMS  
Keyword(7)  
Keyword(8)  
1st Author's Name Seiichi Endo  
1st Author's Affiliation Renesas Technology Corp. (Renesas)
2nd Author's Name Yoshiki Maruyama  
2nd Author's Affiliation Renesas Technology Corp. (Renesas)
3rd Author's Name Yoji Kawasaki  
3rd Author's Affiliation Renesas Technology Corp. (Renesas)
4th Author's Name Tomohiro Yamashita  
4th Author's Affiliation Renesas Technology Corp. (Renesas)
5th Author's Name Hidekazu Oda  
5th Author's Affiliation Renesas Technology Corp. (Renesas)
6th Author's Name Yasuo Inoue  
6th Author's Affiliation Renesas Technology Corp. (Renesas)
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Speaker Author-1 
Date Time 2007-10-05 15:25:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2007-191 
Volume (vol) vol.107 
Number (no) no.245 
Page pp.61-64 
#Pages 4 
Date of Issue 2007-09-27 (SDM) 

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