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Paper Abstract and Keywords
Presentation 2007-10-05 14:25
Work Function Modulation of PtSi Alloying with Hf
Shun-ichiro Ohmi, Jun Gao, Yusuke Nakano (Tokyo Tech) SDM2007-189
Abstract (in Japanese) (See Japanese page) 
(in English) Work function modulation of PtSi by alloying with Hf was investigated. When a silicidation of Pt/Hf/n-Si(100) was carried out at 700oC in N2 ambient, 0.1 eV reduction of barrier height for electron was observed. For the application to silicide gate, a formation of PtSi alloying with Hf on SiO2/p-Si(100) was also investigated.
Keyword (in Japanese) (See Japanese page) 
(in English) PtSi / monosilicide / alloy / work function / sheet resistance / flat-band voltage / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 245, SDM2007-189, pp. 53-56, Oct. 2007.
Paper # SDM2007-189 
Date of Issue 2007-09-27 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2007-10-04 - 2007-10-05 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process Science and Novel Process Technologies 
Paper Information
Registration To SDM 
Conference Code 2007-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Work Function Modulation of PtSi Alloying with Hf 
Sub Title (in English)  
Keyword(1) PtSi  
Keyword(2) monosilicide  
Keyword(3) alloy  
Keyword(4) work function  
Keyword(5) sheet resistance  
Keyword(6) flat-band voltage  
Keyword(7)  
Keyword(8)  
1st Author's Name Shun-ichiro Ohmi  
1st Author's Affiliation Tokyo Institute Of Technology (Tokyo Tech)
2nd Author's Name Jun Gao  
2nd Author's Affiliation Tokyo Institute Of Technology (Tokyo Tech)
3rd Author's Name Yusuke Nakano  
3rd Author's Affiliation Tokyo Institute Of Technology (Tokyo Tech)
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Speaker Author-1 
Date Time 2007-10-05 14:25:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2007-189 
Volume (vol) vol.107 
Number (no) no.245 
Page pp.53-56 
#Pages 4 
Date of Issue 2007-09-27 (SDM) 

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