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Paper Abstract and Keywords
Presentation 2007-10-05 10:55
The Evaluation of New Amorphous Hydrocarbon Film aCHx, for Low-k Copper Barrier Film
Hiraku Ishikawa (Tokyo Electron/Tohoku Univ.), Toshihisa Nozawa, Takaaki Matsuoka (Tokyo Electron Technology Development Institute), Akinobu Teramoto, Masaki Hirayama, Takashi Ito, Tadahiro Ohmi (Tohoku Univ.) SDM2007-183
Abstract (in Japanese) (See Japanese page) 
(in English) In recent ULSI, Cu wiring and low-k dielectrics are used to reduce RC delay in interconnect. In order to increase operating speed, the reduction of capacitance for interlayer dielectric using ultra low-k materials has been required. Even though ultra low-k materials have been applied, relatively high k-value materials such as SiC or SiCN have to be used for Cu diffusion barrier. As a result, it is difficult to reduce the effective k-value (keff) of dielectrics. For this problem, we propose the solution by developing of the new amorphous hydrocarbon film (aCHx) as a new Cu barrier dielectric which deposited using the microwave-excited plasma equipment incorporating the showerhead structure. Then we present basic property of aCHx film and also show its Cu diffusion barrier capability in this paper.
Keyword (in Japanese) (See Japanese page) 
(in English) low-k / Cu / barrier layer / keff / / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 245, SDM2007-183, pp. 31-34, Oct. 2007.
Paper # SDM2007-183 
Date of Issue 2007-09-27 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2007-10-04 - 2007-10-05 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process Science and Novel Process Technologies 
Paper Information
Registration To SDM 
Conference Code 2007-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) The Evaluation of New Amorphous Hydrocarbon Film aCHx, for Low-k Copper Barrier Film 
Sub Title (in English)  
Keyword(1) low-k  
Keyword(2) Cu  
Keyword(3) barrier layer  
Keyword(4) keff  
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1st Author's Name Hiraku Ishikawa  
1st Author's Affiliation Tokyo Electron Technology Development Institute, INC/Tohoku University (Tokyo Electron/Tohoku Univ.)
2nd Author's Name Toshihisa Nozawa  
2nd Author's Affiliation Tokyo Electron Technology Development Institute, INC (Tokyo Electron Technology Development Institute)
3rd Author's Name Takaaki Matsuoka  
3rd Author's Affiliation Tokyo Electron Technology Development Institute, INC (Tokyo Electron Technology Development Institute)
4th Author's Name Akinobu Teramoto  
4th Author's Affiliation Tohoku University (Tohoku Univ.)
5th Author's Name Masaki Hirayama  
5th Author's Affiliation Tohoku University (Tohoku Univ.)
6th Author's Name Takashi Ito  
6th Author's Affiliation Tohoku University (Tohoku Univ.)
7th Author's Name Tadahiro Ohmi  
7th Author's Affiliation Tohoku University (Tohoku Univ.)
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Speaker Author-1 
Date Time 2007-10-05 10:55:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2007-183 
Volume (vol) vol.107 
Number (no) no.245 
Page pp.31-34 
#Pages 4 
Date of Issue 2007-09-27 (SDM) 

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