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Paper Abstract and Keywords
Presentation 2007-10-05 13:10
High Mobility Bottom Gate Microcrystalline Si TFT Fabricated by Microwave Plasma CVD
Akihiko Hiroe, Akinobu Teramoto, Tadahiro Ohmi (Tohoku Univ.) SDM2007-186
Abstract (in Japanese) (See Japanese page) 
(in English) c-Si has been deposited by microwave (2.45GHz) plasma CVD. (220) preferentially oriented film and (111) preferentially oriented film has been deposited and compared. (220) preferentially oriented film shows continuous cross sectional morphology, and has less dangling bond density compared with (111) preferentially oriented film. Bottom gate TFT has been fabricated with (220) preferentially oriented c-Si. Mobility of about 1.4cm2/Vsec and on/off ratio of more than 105 has been achieved for W/L=20/4m bottom gate transistor after hydrogen plasma treatment.
Keyword (in Japanese) (See Japanese page) 
(in English) microwave / plasma CVD / microcrystallin Si / TFT / / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 245, SDM2007-186, pp. 41-44, Oct. 2007.
Paper # SDM2007-186 
Date of Issue 2007-09-27 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2007-186

Conference Information
Committee SDM  
Conference Date 2007-10-04 - 2007-10-05 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process Science and Novel Process Technologies 
Paper Information
Registration To SDM 
Conference Code 2007-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) High Mobility Bottom Gate Microcrystalline Si TFT Fabricated by Microwave Plasma CVD 
Sub Title (in English)  
Keyword(1) microwave  
Keyword(2) plasma CVD  
Keyword(3) microcrystallin Si  
Keyword(4) TFT  
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1st Author's Name Akihiko Hiroe  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Akinobu Teramoto  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Tadahiro Ohmi  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
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Speaker Author-1 
Date Time 2007-10-05 13:10:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2007-186 
Volume (vol) vol.107 
Number (no) no.245 
Page pp.41-44 
#Pages 4 
Date of Issue 2007-09-27 (SDM) 

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