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Paper Abstract and Keywords
Presentation 2007-10-12 10:50
Analysis of Buffer-Related Slow Current Transients and Current Collapse in AlGaN/GaN HEMTs
Atsushi Nakajima, Kazushige Horio (Shibaura Inst. Tech.) ED2007-169 CPM2007-95 LQE2007-70 Link to ES Tech. Rep. Archives: ED2007-169 CPM2007-95 LQE2007-70
Abstract (in Japanese) (See Japanese page) 
(in English) Two-dimensional transient analyses of AlGaN/GaN HEMTs are performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. Quasi-pulsed I-V curves are derived from the transient characteristics. When the drain voltage is raised abruptly, electrons are injected into the buffer layer and captured by deep donors, and when it is lowered abruptly, the drain currents remain at low values for some periods and begin to increase slowly as the deep donors begin to emit electrons, showing drain-lag behavior. The gate lag could also occur due to deep levels in the buffer layer, and it is correlated with relatively high source access resistance in AlGaN/GaN HEMTs. It is shown that the current slump is more pronounced when the deep-acceptor density in the buffer layer is higher and when an off-state drain voltage is higher, because the trapping effects become more significant. The drain lag could be a major cause of current slump in the case of higher off-state drain voltage. It is suggested that to minimize current slump in AlGaN/GaN HEMTs, an acceptor density in the buffer layer should be made low, although there may be a trade-off relationship between reducing current slump and obtaining sharp current cutoff.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / HEMT / trap / current collapse / drain lag / gate lag / access resistance / device simulation  
Reference Info. IEICE Tech. Rep., vol. 107, no. 251, ED2007-169, pp. 67-72, Oct. 2007.
Paper # ED2007-169 
Date of Issue 2007-10-04 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2007-169 CPM2007-95 LQE2007-70 Link to ES Tech. Rep. Archives: ED2007-169 CPM2007-95 LQE2007-70

Conference Information
Committee CPM ED LQE  
Conference Date 2007-10-11 - 2007-10-12 
Place (in Japanese) (See Japanese page) 
Place (in English) Fukui Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride Based Optical and Electronic Devices, Materials and Related Technologies 
Paper Information
Registration To ED 
Conference Code 2007-10-CPM-ED-LQE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Analysis of Buffer-Related Slow Current Transients and Current Collapse in AlGaN/GaN HEMTs 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) HEMT  
Keyword(3) trap  
Keyword(4) current collapse  
Keyword(5) drain lag  
Keyword(6) gate lag  
Keyword(7) access resistance  
Keyword(8) device simulation  
1st Author's Name Atsushi Nakajima  
1st Author's Affiliation Shibaura Institute of Technology (Shibaura Inst. Tech.)
2nd Author's Name Kazushige Horio  
2nd Author's Affiliation Shibaura Institute of Technology (Shibaura Inst. Tech.)
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Speaker Author-1 
Date Time 2007-10-12 10:50:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2007-169, CPM2007-95, LQE2007-70 
Volume (vol) vol.107 
Number (no) no.251(ED), no.252(CPM), no.253(LQE) 
Page pp.67-72 
#Pages
Date of Issue 2007-10-04 (ED, CPM, LQE) 


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