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Technical Committee on Electron Device (ED) [schedule] [select]
Chair Masaaki Kuzuhara (Univ. of Fukui)
Vice Chair Tamotsu Hashidume (Hokkaido Univ.)
Secretary Manabu Arai (New JRC), Shin-ichiro Takatani (Hitachi)
Assistant Koichi Murata (NTT), Naoki Hara (Fujitsu Labs.)

Technical Committee on Component Parts and Materials (CPM) [schedule] [select]
Chair Kiichi Kamimura (Shinshu Univ.)
Vice Chair Kanji Yasui (Nagaoka Univ. of Tech.)
Secretary Seiji Toyoda (NTT), Hidehiko Shimizu (Niigata Univ.)
Assistant Yasushi Takemura (Yokohama National Univ.), Naoki Oba (NTT)

Technical Committee on Lasers and Quantum Electronics (LQE) [schedule] [select]
Chair Shinji Tsuji (Hitachi)
Vice Chair Yoshiaki Nakano (Univ. of Tokyo)
Secretary Kouji Nakahara (Hitachi), Takayuki Yamanaka (NTT)

Conference Date Thu, Oct 11, 2007 13:00 - 18:00
Fri, Oct 12, 2007 09:00 - 16:55
Topics Nitride Based Optical and Electronic Devices, Materials and Related Technologies 
Conference Place Memorial Academy Hall, Bunkyo Campus, University of Fukui 
Address 3-9-1, Bunkyo, Fukui-shi, 910-8507, Japan
Transportation Guide Echizen Railway (Awara-Mikuni Line); Fukui Station → Fukudai-mae-nishi-fukui Station (approx. 10 minutes)
http://www.fukui-u.ac.jp/eng/access/index.html
Contact
Person		 Prof. Masaaki Kuzuhara
0776-27-9714
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

Thu, Oct 11 PM 
13:00 - 18:00
  13:00-13:05 Opening Address ( 5 min. )
(1) 13:05-13:30 Polarization Properties in III-nitride Quantum Wells with Various Substrate Orientations ED2007-156 CPM2007-82 LQE2007-57 Atsushi Yamaguchi (Kanazawa Inst. of Technology)
(2) 13:30-13:55 Micro photoluminescence spectroscopy of single InGaN/GaN nanocolumn ED2007-157 CPM2007-83 LQE2007-58 Akio Kaneta (Kyoto Univ./JST), Akinobu Kanai (Kyoto Univ.), Mitsuru Funato, Yoichi Kawakami (Kyoto Univ./JST), Akihiko Kikuchi, Katsumi Kishino (Sophia Univ./JST)
(3) 13:55-14:20 Fabrication of GaN/AlGaN nanocolumn LEDs by rf-assisted molecular beam epitaxy ED2007-158 CPM2007-84 LQE2007-59 Hiroto Sekiguchi (Sophia Univ./JST), Kei Kato, Jo Tanaka (Sophia Univ.), Akihiko Kikuchi, Katsumi Kishino (Sophia Univ./JST)
  14:20-14:30 Break ( 10 min. )
(4) 14:30-14:55 Fabrication of GaN-based UV LEDs with metal, oxide and GaN stacks Shigetoshi Komiyama, Kazuyuki Noguchi, Yoshihiro Mashiyama, Kaori Yoshioka, Tohru Honda (Kogakuin Univ.)
(5) 14:55-15:20 High efficiency Ultraviolet LEDs on Si Using InAlGaN Multi-Quantum-Wells with High Indium Contents ED2007-159 CPM2007-85 LQE2007-60 Yasuyuki Fukushima, Yuji Takase, Manabu Usuda, Kenji Orita, Tetsuzo Ueda, Tsuyoshi Tanaka (M. E. I. Co., Ltd.)
(6) 15:20-15:45 Effects of trace moisture in NH3 gas on electro-luminescence intensity of InGaN LED
-- Moisture control in NH3 gas for MOVPE growth of LED structure -- ED2007-160 CPM2007-86 LQE2007-61		 Hirotaka Mangyou, Hiroyuki Ono, Yoshihiko Kobayashi, Koh Matsumoto, Kazunobu Shibuya (TAIYO NIPPON SANSO)
(7) 15:45-16:10 340nm-band high-power UV-LED using p-type InAlGaN layers and high quality AlN ED2007-161 CPM2007-87 LQE2007-62 Sachie Fujikawa (RIKEN), Takayoshi Takano, Yukihiro Kondo (Matsushita Electric Works, Ltd.), Hideki Hirayama (RIKEN)
  16:10-16:20 Break ( 10 min. )
(8) 16:20-16:45 Characteristics of polarized emission from nonpolar m-plane InGaN-based LEDs Hiroki Tsujimura, Satoshi Nakagawa, Kuniyoshi Okamoto, Hiroaki Ohta (Rohm Co., Ltd.)
(9) 16:45-17:10 Suppression of COD in pure-blue Lasers with current injecition-free region near the laser facet. ED2007-162 CPM2007-88 LQE2007-63 Osamu Goto (Sony), Yoshitsugu Ohizumi, Miwako Shouji, Takayuki Tanaka, Yukio Hoshina, Makoto Ohta (Sony Shiroishi Semiconductor Inc.), Yoshifumi Yabuki, Shigetaka Tomiya, Masao Ikeda (Sony)
(10) 17:10-17:35 Deep UV Lasing of AlGaN Multiple Quantum Well Lasers and Its Anisotropc Properties of Laser and Spontaneous Edge and Surface Emissions ED2007-163 CPM2007-89 LQE2007-64 Hideo Kawanishi, Eiichiro Niikura (Kohgakuin Univ.)
(11) 17:35-18:00 UV-response characteristics of insulator/n-GaN MIS structures for sensor application ED2007-164 CPM2007-90 LQE2007-65 Chihoko Mizue, Tetsuya Matsuyama, Junji Kotani, Marcin Miczek, Tamotsu Hashizume (Hokkaido Univ.)
Fri, Oct 12 AM 
09:00 - 16:55
(12) 09:00-09:25 Theoretical Study of Multi-Step and Graded Field Plates for AlGaN/GaN HEMTs ED2007-165 CPM2007-91 LQE2007-66 Ryosuke Sakai, Taketoshi Nishida, Kenji Shiojima, Masaaki Kuzuhara (Fniv. of Fukui)
(13) 09:25-09:50 Normally-off Operation of AlGaN/GaN MIS-HFET on Non-polar (11-20) plane ED2007-166 CPM2007-92 LQE2007-67 Masayuki Kuroda, Tetsuzo Ueda, Tsuyoshi Tanaka (MEI)
(14) 09:50-10:15 Low leakage current ITO schottky electrode for AlGaN/GaN HEMT ED2007-167 CPM2007-93 LQE2007-68 Keita Matsuda, Takeshi Kawasaki, Ken Nakata, Takeshi Igarashi, Seiji Yaegashi (Eudyna Devices)
(15) 10:15-10:40 Study on AlGaN/GaN HEMT structures on 4-inch Si (111) substrates with thick buffer layers ED2007-168 CPM2007-94 LQE2007-69 Yutaka Terada, Takaaki Suzue, Hiroyasu Ishikawa, Takashi Egawa (Nagoya Inst. of Tech.)
  10:40-10:50 Break ( 10 min. )
(16) 10:50-11:15 Analysis of Buffer-Related Slow Current Transients and Current Collapse in AlGaN/GaN HEMTs ED2007-169 CPM2007-95 LQE2007-70 Atsushi Nakajima, Kazushige Horio (Shibaura Inst. Tech.)
(17) 11:15-11:40 Surface control of AlGaN/GaN strcutures ED2007-170 CPM2007-96 LQE2007-71 Masafumi Tajima, Junji Kotani, Takahiro Tamura, Tamotsu Hashizume (Hokkaido Univ.)
(18) 11:40-12:05 Theoretical study on high-frequency performance of AlInN/InGaN heterojunction FETs ED2007-171 CPM2007-97 LQE2007-72 Kazuki Kodama, Taketoshi Nishida, Kenji Shiojima, Masaaki Kuzuhara (Univ. of Fukui)
(19) 12:05-12:30 Ku-band AlGaN/GaN HEMTs with 50W Output Power ED2007-172 CPM2007-98 LQE2007-73 Yasushi Kashiwabara, Shigenori Takagi, Kazutoshi Masuda, Keiichi Matsushita, Ken Onodera, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda (Toshiba)
  12:30-13:50 Lunch Break ( 80 min. )
(20) 13:50-14:15 Electrical characterization of homoepitaxially-grown pn GaN diodes ED2007-173 CPM2007-99 LQE2007-74 Yutaka Tokuda, Youichi Matsuoka, Takeshi Seo (Aichi Inst. Tech.), Hiroyuki Ueda, Osamu Ishiguro, Narumasa Soejima, Tetsu Kachi (Toyota Central R&D Labs. Inc.)
(21) 14:15-14:40 Growth Condition of Blue Emitting InGaN Microcrystals ED2007-174 CPM2007-100 LQE2007-75 Hisashi Kanie, Kenichi Akashi (TUS)
(22) 14:40-15:05 Fabrication of novel InN/GaN multi-quantum wells consisting of one-monolayer InN wells in GaN matrix for application for new structure light emitting devices ED2007-175 CPM2007-101 LQE2007-76 Naoki Hashimoto, Akihiko Yuki, Hideyuki Saito (Chiba Univ.), Xinqiang Wang (JST), Song-Bek Che, Yoshihiro Ishitani, Akihiko Yoshikawa (Chiba Univ./JST)
(23) 15:05-15:30 Selective MOVPE of InGaN/GaN on a micro-faceted GaN fabricated on an Si substrate ED2007-176 CPM2007-102 LQE2007-77 Yoshiki Nakajima, Yoshio Honda, Masahito Yamaguchi, Nobuhiko Sawaki (Nagoya Univ.)
  15:30-15:40 Break ( 10 min. )
(24) 15:40-16:05 Preparation of GaN Crystals by a Reaction of Ga with Li3N ED2007-177 CPM2007-103 LQE2007-78 Akira Mabuchi, Takayoshi Hirano, Takashi Sugiura, HIdekiMinoura (Gifu Univ)
(25) 16:05-16:30 Fabrication of MgZnO films by molecular precursor method and its application to UV-transparent electrodes Yoshihiro Mashiyama, Kaori Yoshioka, Shigetoshi Komiyama, Shinsuke Adachi, Mitsunobu Satou, Tohru Honda (Kogakuin Univ.)
(26) 16:30-16:55 Atmospheric-pressure MOVPE growth of In-rich (1~0.5) InAlN ED2007-178 CPM2007-104 LQE2007-79 Yoshinori Hochin, Akihiro Hashimoto, Akio Yamamoto (Fukui Univ.)

Contact Address and Latest Schedule Information
ED Technical Committee on Electron Device (ED)   [Latest Schedule]
Contact Address Manabu Arai（New JRC）
TEL: 049-278-1477、FAX: 049-278-1419
E--mail: injr
Shinichiro Takatani（Hitachi）
TEL: 049-278-1477、FAX: 049-278-1419
E--mail: er
Koichi Murata（NTT)
TEL：046-240-2871、FAX：046-270-2872
E--mail： aecl
Hara Naoki （Fujitsu Lab.）
TEL : 046-250-8242、FAX : 046-250-4337
E--mail : nf 
CPM Technical Committee on Component Parts and Materials (CPM)   [Latest Schedule]
Contact Address Hidehiko Shimizu（Niigata University）
TEL 025-262-6811, FAX 025-262-6811
E--mail: engi-u
Yasushi Takemura（Yokohama National University）
TEL 045-339-4151, FAX 045-339-4151
E--mail: y 
LQE Technical Committee on Lasers and Quantum Electronics (LQE)   [Latest Schedule]
Contact Address Kouji Nakahara (Hitachi)
TEL +81-42-323-1111, FAX +81-42-327-7786
E--mail: ugu
Takayuki Yamanaka
TEL +81-46-240-4403, FAX +81-46-240-2859
E--mail: taecl 
Announcement Homepage of LQE is http://www.ieice.org/~lqe/jpn/


Last modified: 2007-09-03 08:57:13


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