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Paper Abstract and Keywords
Presentation 2007-10-30 11:15
Crystalline Orientation effects on device characteristics in ultra-small multi-gate devices
Hideki Minari, Daisuke Nishitani, Nobuya Mori (Osaka Univ.) VLD2007-53 SDM2007-197
Abstract (in Japanese) (See Japanese page) 
(in English) Atomistic hole transport simulation based on a nonequilibrium Green's function method and tight-binding approximation has been performed for four types of ultra-thin double-gate silicon-on-insulator MOSFETs; (i) $\langle 100 \rangle$ channel device on $(100)$ substrate, (ii) $\langle 110 \rangle$ channel device on $(100)$ substrate, (iii) $\langle 100 \rangle$ channel device on $(110)$ substrate, and (iv) $\langle 110 \rangle$ channel device on $(110)$ substrate. Simulation results show that the difference in crystalline orientation of the devices greatly affects ballistic hole current due to a strong confinement-induced mixing of heavy- and light-hole states.
Keyword (in Japanese) (See Japanese page) 
(in English) Silicon / MOSFET / Hole Transport / Crystalline Orientation / Tight-binding / NEGF / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 297, SDM2007-197, pp. 15-18, Oct. 2007.
Paper # SDM2007-197 
Date of Issue 2007-10-23 (VLD, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF VLD2007-53 SDM2007-197

Conference Information
Committee SDM VLD  
Conference Date 2007-10-30 - 2007-10-31 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process, Device, Circuit Simulation, etc. 
Paper Information
Registration To SDM 
Conference Code 2007-10-SDM-VLD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Crystalline Orientation effects on device characteristics in ultra-small multi-gate devices 
Sub Title (in English)  
Keyword(1) Silicon  
Keyword(2) MOSFET  
Keyword(3) Hole Transport  
Keyword(4) Crystalline Orientation  
Keyword(5) Tight-binding  
Keyword(6) NEGF  
Keyword(7)  
Keyword(8)  
1st Author's Name Hideki Minari  
1st Author's Affiliation Osaka University (Osaka Univ.)
2nd Author's Name Daisuke Nishitani  
2nd Author's Affiliation Osaka University (Osaka Univ.)
3rd Author's Name Nobuya Mori  
3rd Author's Affiliation Osaka University (Osaka Univ.)
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Speaker Author-1 
Date Time 2007-10-30 11:15:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # VLD2007-53, SDM2007-197 
Volume (vol) vol.107 
Number (no) no.295(VLD), no.297(SDM) 
Page pp.15-18 
#Pages 4 
Date of Issue 2007-10-23 (VLD, SDM) 

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