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Paper Abstract and Keywords
Presentation 2007-11-09 13:45
Measurement of electron barrier height at polymeric semiconductor/ cathode interface by internal photoemission spectroscopy
Koji Yamada, Eiji Itoh, Keiichi Miyairi (Shinshu Univ.) OME2007-51
Abstract (in Japanese) (See Japanese page) 
(in English) We have investigated the electron injection barrier height at MEH-PPV or PFO and cathode interface by internal photoemission spectroscopy technique. We proposed the three layered structure consisting of ITO/TiO2/polymide/polymeric semiconductor/metal (cathode) in this study. The external voltage of the three layered device was successfully reduced to 1/3 – 1/5 compared with the double layered device consisting of ITO/ Al2O3/ polymeric semiconductor/ metal device. Here, TiO2 was used as hole blocking and electron transporting layer, whereas FPI was used as intermediate layer. We measured the electron barrier height at MEH-PPV/cathodes interface in ITO/TiO2(100nm)/FPI(50nm)/MEH-PPV(200nm)/metal(cathode) device. And they were estimated as 1.1eV, 1.4eV, and 1.55eV for Al, Cr, and Au, respectively. The influence of interfacial states was discussed from the relationship between the measured barrier height and the work function of metals. The electron barrier height at PFO /cathode interface was also discussed.
Keyword (in Japanese) (See Japanese page) 
(in English) Internal photoemission / Electron barrier height / MEH-PPV / PFO / / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 307, OME2007-51, pp. 17-22, Nov. 2007.
Paper # OME2007-51 
Date of Issue 2007-11-02 (OME) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee OME  
Conference Date 2007-11-09 - 2007-11-09 
Place (in Japanese) (See Japanese page) 
Place (in English) Niigata Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To OME 
Conference Code 2007-11-OME 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Measurement of electron barrier height at polymeric semiconductor/ cathode interface by internal photoemission spectroscopy 
Sub Title (in English)  
Keyword(1) Internal photoemission  
Keyword(2) Electron barrier height  
Keyword(3) MEH-PPV  
Keyword(4) PFO  
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1st Author's Name Koji Yamada  
1st Author's Affiliation Shinshu University (Shinshu Univ.)
2nd Author's Name Eiji Itoh  
2nd Author's Affiliation Shinshu University (Shinshu Univ.)
3rd Author's Name Keiichi Miyairi  
3rd Author's Affiliation Shinshu University (Shinshu Univ.)
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Speaker Author-1 
Date Time 2007-11-09 13:45:00 
Presentation Time 25 minutes 
Registration for OME 
Paper # OME2007-51 
Volume (vol) vol.107 
Number (no) no.307 
Page pp.17-22 
#Pages 6 
Date of Issue 2007-11-02 (OME) 

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