Paper Abstract and Keywords |
Presentation |
2007-11-09 13:20
Electrical and Electro-optical properties of poly (3-hexylthiophene) field effect transistors Hiroshi Nagai, Eiji Itoh, Keiichi Miyairi (Shinshu Univ.) OME2007-50 Link to ES Tech. Rep. Archives: OME2007-50 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We investigated an electro-optical property of polymer-based field effect transistor (p-FET) by charge modulation spectroscopy (CMS) technique. It was compared with electrical characteristics such as FET and MIS diode properties. The field effect mobility of P3HT deposited on commercially supplied polyimide (SE-812), which is developed for inter-layer insulator, was 3.1×10-3 cm2/Vs, whereas the mobility of P3HT on fluorinated polyimide (FPI) was estimated as 8.5×10-5cm2/Vs. The signals of CMS curves were suppressed for large positive voltage (depletion), whereas two additional peaks were observed at 1.27 and 1.77eV observed in accumulation for the device fabricated on SE-812. On the other hand, the additional peak at 1.27eV disappeared in the device on FPI. These differences were ascribed to their difference in the behavior of polarons and carriers (holes) at polyimide/ P3HT interface. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
polythiophene / electro-optics / CMS / OFET / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 107, no. 307, OME2007-50, pp. 11-15, Nov. 2007. |
Paper # |
OME2007-50 |
Date of Issue |
2007-11-02 (OME) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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OME2007-50 Link to ES Tech. Rep. Archives: OME2007-50 |
Conference Information |
Committee |
OME |
Conference Date |
2007-11-09 - 2007-11-09 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Niigata Univ. |
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Paper Information |
Registration To |
OME |
Conference Code |
2007-11-OME |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Electrical and Electro-optical properties of poly (3-hexylthiophene) field effect transistors |
Sub Title (in English) |
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Keyword(1) |
polythiophene |
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electro-optics |
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CMS |
Keyword(4) |
OFET |
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1st Author's Name |
Hiroshi Nagai |
1st Author's Affiliation |
Shinshu University (Shinshu Univ.) |
2nd Author's Name |
Eiji Itoh |
2nd Author's Affiliation |
Shinshu University (Shinshu Univ.) |
3rd Author's Name |
Keiichi Miyairi |
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Shinshu University (Shinshu Univ.) |
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Speaker |
Author-1 |
Date Time |
2007-11-09 13:20:00 |
Presentation Time |
25 minutes |
Registration for |
OME |
Paper # |
OME2007-50 |
Volume (vol) |
vol.107 |
Number (no) |
no.307 |
Page |
pp.11-15 |
#Pages |
5 |
Date of Issue |
2007-11-02 (OME) |