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Paper Abstract and Keywords
Presentation 2007-11-16 13:00
Electrical Characterization of Yttriumaluminate(YAlO)Film
Keiko Matsunouchi, Naoyoshi Komatsu, Chiharu Kimura, Hidemitsu Aoki, Takashi Sugino (Osaka Univ.) R2007-46 ED2007-179 SDM2007-214
Abstract (in Japanese) (See Japanese page) 
(in English) To achieve high power FET using wide bandgap semiconductor, a gate insulator film with a wide bandgap and a high dielectric constant (high-K) is required. Especially, to realize a stable operation for wide bandgap semiconductor devices under the severe environment, suppression of the leakage current of the gate insulator is required. We attempted to study Yttriumaluminate (YAlO) as a gate insulator film for the first time. We succeeded in suppressing gate leakage current and charge shifts in the MIS structure. This result suggests that the YAlO film can be applied for wide bandgap semiconductor devices such as SiC and diamond.
Keyword (in Japanese) (See Japanese page) 
(in English) gate insulator / high dielectric constant / High-K / wide bandgap semiconductor / Yttrium / Al2O3 / MIS structure /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 319, ED2007-179, pp. 1-6, Nov. 2007.
Paper # ED2007-179 
Date of Issue 2007-11-09 (R, ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF R2007-46 ED2007-179 SDM2007-214

Conference Information
Committee SDM R ED  
Conference Date 2007-11-16 - 2007-11-16 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2007-11-SDM-R-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Electrical Characterization of Yttriumaluminate(YAlO)Film 
Sub Title (in English)  
Keyword(1) gate insulator  
Keyword(2) high dielectric constant  
Keyword(3) High-K  
Keyword(4) wide bandgap semiconductor  
Keyword(5) Yttrium  
Keyword(6) Al2O3  
Keyword(7) MIS structure  
Keyword(8)  
1st Author's Name Keiko Matsunouchi  
1st Author's Affiliation Osaka University (Osaka Univ.)
2nd Author's Name Naoyoshi Komatsu  
2nd Author's Affiliation Osaka University (Osaka Univ.)
3rd Author's Name Chiharu Kimura  
3rd Author's Affiliation Osaka University (Osaka Univ.)
4th Author's Name Hidemitsu Aoki  
4th Author's Affiliation Osaka University (Osaka Univ.)
5th Author's Name Takashi Sugino  
5th Author's Affiliation Osaka University (Osaka Univ.)
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Speaker Author-1 
Date Time 2007-11-16 13:00:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # R2007-46, ED2007-179, SDM2007-214 
Volume (vol) vol.107 
Number (no) no.318(R), no.319(ED), no.320(SDM) 
Page pp.1-6 
#Pages 6 
Date of Issue 2007-11-09 (R, ED, SDM) 

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