| IEICE Technical Committee Submission System Conference Paper's Information |
Online Proceedings [Sign in] Tech. Rep. Archives |
| Go Top Page | Go Previous | [Japanese] / [English] |
| Paper Abstract and Keywords | ||
| Presentation | 2007-11-16 14:15 High Stability of Drain Current at High Temperatures in Multi-Mesa-Channel AlGaN/GaN HEMT Takahiro Tamura, Junji Kotani, Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.)  R2007-49 ED2007-182 SDM2007-217 Link to ES Tech. Rep. Archives: ED2007-182 SDM2007-217 |
|
| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We fabricated a multi-mesa-channel (MMC) structure by forming a periodic trench just under a gate electrode to improve the uniformity of effective electric field in the channel in an AlGaN/GaN high electron mobility transistor (HEMT). The MMC HEMT showed a shallower threshold voltage than that of a conventional planar device. In addition, a unique performance, i.e., a nearly temperature-independent saturation drain current, was observed in the MMC device in a wide temperature range from 120 K to 500 K. A 2-dimensional potential calculation indicates that the mesa-side gate effectively modulates the potential, resulting in a field surrounding 2-dimensional electron gas (2DEG). Such a surrounding-field effect and a relatively lower source access resistance may be related to a unique current behavior in the MMC HEMT. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | GaN / AlGaN / high electron mobility transistor(HEMT) / multi-mesa-channel (MMC) structure / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 107, no. 319, ED2007-182, pp. 19-22, Nov. 2007. | |
| Paper # | ED2007-182 | |
| Date of Issue | 2007-11-09 (R, ED, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | R2007-49 ED2007-182 SDM2007-217 Link to ES Tech. Rep. Archives: ED2007-182 SDM2007-217 |
|
| Conference Information | |
| Committee | SDM R ED |
| Conference Date | 2007-11-16 - 2007-11-16 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2007-11-SDM-R-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High Stability of Drain Current at High Temperatures in Multi-Mesa-Channel AlGaN/GaN HEMT |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | AlGaN |
| Keyword(3) | high electron mobility transistor(HEMT) |
| Keyword(4) | multi-mesa-channel (MMC) structure |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Takahiro Tamura |
| 1st Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
| 2nd Author's Name | Junji Kotani |
| 2nd Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
| 3rd Author's Name | Kota Ohi |
| 3rd Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
| 4th Author's Name | Tamotsu Hashizume |
| 4th Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
| 5th Author's Name | |
| 5th Author's Affiliation | () |
| 6th Author's Name | |
| 6th Author's Affiliation | () |
| 7th Author's Name | |
| 7th Author's Affiliation | () |
| 8th Author's Name | |
| 8th Author's Affiliation | () |
| 9th Author's Name | |
| 9th Author's Affiliation | () |
| 10th Author's Name | |
| 10th Author's Affiliation | () |
| 11th Author's Name | |
| 11th Author's Affiliation | () |
| 12th Author's Name | |
| 12th Author's Affiliation | () |
| 13th Author's Name | |
| 13th Author's Affiliation | () |
| 14th Author's Name | |
| 14th Author's Affiliation | () |
| 15th Author's Name | |
| 15th Author's Affiliation | () |
| 16th Author's Name | |
| 16th Author's Affiliation | () |
| 17th Author's Name | |
| 17th Author's Affiliation | () |
| 18th Author's Name | |
| 18th Author's Affiliation | () |
| Speaker | Author-1 |
| Date Time | 2007-11-16 14:15:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | R2007-49, ED2007-182, SDM2007-217 |
| Volume (vol) | vol.107 |
| Number (no) | no.318(R), no.319(ED), no.320(SDM) |
| Page | pp.19-22 |
| #Pages | 4 |
| Date of Issue | 2007-11-09 (R, ED, SDM) |
[Return to Top Page]