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Paper Abstract and Keywords
Presentation 2007-11-16 14:55
Reliability Study of AlGaN/GaN HEMTs Device
Keiichi Matsushita, Shinichiro Teramoto, Hiroyuki Sakurai, Jeoungchill Shim, Hisao Kawasaki, Kazutaka Takagi, Yoshiharu Takada, Kunio Tsuda (Toshiba) R2007-50 ED2007-183 SDM2007-218
Abstract (in Japanese) (See Japanese page) 
(in English) AlGaN/GaN HEMTs devices are studied intensely because of its ability of operation at higher voltage with higher power density. As the study progress, it is realized that the reliability of the fabricated device is a quite important issue. From the reliability study of AlGaN/GaN HEMTs, it is found that the current degradation has relationships with the isolation structure. In this paper, the differences of current degradations between two isolation methods are studied and some interpretations concerning the source of these degradations are discussed.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / reliability / HEMT / AlGaN / / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 319, ED2007-183, pp. 23-26, Nov. 2007.
Paper # ED2007-183 
Date of Issue 2007-11-09 (R, ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF R2007-50 ED2007-183 SDM2007-218

Conference Information
Committee SDM R ED  
Conference Date 2007-11-16 - 2007-11-16 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2007-11-SDM-R-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Reliability Study of AlGaN/GaN HEMTs Device 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) reliability  
Keyword(3) HEMT  
Keyword(4) AlGaN  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Keiichi Matsushita  
1st Author's Affiliation Microwave Solid-State Engineering Dept., Komukai Operations, Toshiba Corporation (Toshiba)
2nd Author's Name Shinichiro Teramoto  
2nd Author's Affiliation Microwave Solid-State Engineering Dept., Komukai Operations, Toshiba Corporation (Toshiba)
3rd Author's Name Hiroyuki Sakurai  
3rd Author's Affiliation Microwave Solid-State Engineering Dept., Komukai Operations, Toshiba Corporation (Toshiba)
4th Author's Name Jeoungchill Shim  
4th Author's Affiliation Microwave Solid-State Engineering Dept., Komukai Operations, Toshiba Corporation (Toshiba)
5th Author's Name Hisao Kawasaki  
5th Author's Affiliation Microwave Solid-State Engineering Dept., Komukai Operations, Toshiba Corporation (Toshiba)
6th Author's Name Kazutaka Takagi  
6th Author's Affiliation Microwave Solid-State Engineering Dept., Komukai Operations, Toshiba Corporation (Toshiba)
7th Author's Name Yoshiharu Takada  
7th Author's Affiliation Advanced Electron Devices Laboratory, Corporate R&D Center, Toshiba Corporation (Toshiba)
8th Author's Name Kunio Tsuda  
8th Author's Affiliation Advanced Electron Devices Laboratory, Corporate R&D Center, Toshiba Corporation (Toshiba)
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Speaker Author-1 
Date Time 2007-11-16 14:55:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # R2007-50, ED2007-183, SDM2007-218 
Volume (vol) vol.107 
Number (no) no.318(R), no.319(ED), no.320(SDM) 
Page pp.23-26 
#Pages 4 
Date of Issue 2007-11-09 (R, ED, SDM) 

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