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Paper Abstract and Keywords
Presentation 2007-11-16 16:10
A New TDDB Degradation Model Based on Cu Ion Drift in Cu Interconnect Dielectrics
Naohito Suzumura, Shigehisa Yamamoto, , , Junko Komori, (Renesas Technology Corp.) R2007-53 ED2007-186 SDM2007-221
Abstract (in Japanese) (See Japanese page) 
(in English) A new physical model of Time-Dependent Dielectric Breakdown (TDDB) in Cu interconnect dielectrics is proposed. TDDB occurs due to the drift of Cu ions under an electric field E. An activation energy analysis of the leakage current demonstrates that these injected Cu ions affect the conduction mechanism of electrons. The dominant electron conduction mechanism changes from Poole-Frenkel electron current through the Cu barrier dielectrics to Fowler-Nordheim current due to the Cu pile-up at the cathode end. We assumed two possible types of Cu ion drift mechanism, Schottky type or Poole-Frenkel type. The field acceleration model (√E model) of the Poole-Frenkel type fits both TDDB lifetime and activation energy very well. The TDDB lifetime is proportional to the exponential of the square root of the electric field √E.
Keyword (in Japanese) (See Japanese page) 
(in English) Cu interconnects / Low-k dielectrics / TDDB / / / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 318, R2007-53, pp. 39-44, Nov. 2007.
Paper # R2007-53 
Date of Issue 2007-11-09 (R, ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF R2007-53 ED2007-186 SDM2007-221

Conference Information
Committee SDM R ED  
Conference Date 2007-11-16 - 2007-11-16 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To R 
Conference Code 2007-11-SDM-R-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A New TDDB Degradation Model Based on Cu Ion Drift in Cu Interconnect Dielectrics 
Sub Title (in English)  
Keyword(1) Cu interconnects  
Keyword(2) Low-k dielectrics  
Keyword(3) TDDB  
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1st Author's Name Naohito Suzumura  
1st Author's Affiliation Renesas Technology Corporation (Renesas Technology Corp.)
2nd Author's Name Shigehisa Yamamoto  
2nd Author's Affiliation Renesas Technology Corporation (Renesas Technology Corp.)
3rd Author's Name *  
3rd Author's Affiliation Renesas Technology Corporation (Renesas Technology Corp.)
4th Author's Name *  
4th Author's Affiliation Renesas Technology Corporation (Renesas Technology Corp.)
5th Author's Name Junko Komori  
5th Author's Affiliation Renesas Technology Corporation (Renesas Technology Corp.)
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6th Author's Affiliation Renesas Technology Corporation (Renesas Technology Corp.)
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Speaker Author-1 
Date Time 2007-11-16 16:10:00 
Presentation Time 25 minutes 
Registration for R 
Paper # R2007-53, ED2007-186, SDM2007-221 
Volume (vol) vol.107 
Number (no) no.318(R), no.319(ED), no.320(SDM) 
Page pp.39-44 
#Pages 6 
Date of Issue 2007-11-09 (R, ED, SDM) 

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