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Paper Abstract and Keywords
Presentation 2007-11-17 09:50
Preparation SiC/SOI structure substrate using Hot-Mesh CVD technique，and dependence of top Si layer thickness
Yuichiro Makino, Hitoshi Miura, Hiroshi Nishiyama, Kanji Yasui, Masasuke Takata, Yasunobu Inoue, Tadashi Akahane (Nagaoka Univ. of Tech.) CPM2007-117
Abstract (in Japanese) (See Japanese page) 
(in English) Epitaxial growth of 3C-SiC films on SOI substrates was investigated by hot-mesh (HM-) CVD method using monomethylsilane (MMS) as a source gas. Hot tungsten wires with a mesh structure was used as a catalyzer for the generation of high density H radicals. At substrate temperatures above750 oC and a mesh temperature of 1600 oC, 3C-SiC crystal was epitaxially grown on the SOI substrates. The voids are liable to be generated in the thin top-Si layer during the high-temperature growth process due to thermal instability of the thin-Si layer. However, using HM-CVD method, the void generation was suppressed by the low temperature growth without carbonization layer.
Keyword (in Japanese) (See Japanese page) 
(in English) silicon carbide / SOI / monomethylsilane / hot-mesh CVD / epitaxial growth / H radical / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 325, CPM2007-117, pp. 65-68, Nov. 2007.
Paper # CPM2007-117 
Date of Issue 2007-11-09 (CPM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee CPM  
Conference Date 2007-11-16 - 2007-11-17 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagaoka University of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process of Thin Film formation and Materials, etc. 
Paper Information
Registration To CPM 
Conference Code 2007-11-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Preparation SiC/SOI structure substrate using Hot-Mesh CVD technique，and dependence of top Si layer thickness 
Sub Title (in English)  
Keyword(1) silicon carbide  
Keyword(2) SOI  
Keyword(3) monomethylsilane  
Keyword(4) hot-mesh CVD  
Keyword(5) epitaxial growth  
Keyword(6) H radical  
Keyword(7)  
Keyword(8)  
1st Author's Name Yuichiro Makino  
1st Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. of Tech.)
2nd Author's Name Hitoshi Miura  
2nd Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. of Tech.)
3rd Author's Name Hiroshi Nishiyama  
3rd Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. of Tech.)
4th Author's Name Kanji Yasui  
4th Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. of Tech.)
5th Author's Name Masasuke Takata  
5th Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. of Tech.)
6th Author's Name Yasunobu Inoue  
6th Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. of Tech.)
7th Author's Name Tadashi Akahane  
7th Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. of Tech.)
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Speaker Author-1 
Date Time 2007-11-17 09:50:00 
Presentation Time 25 minutes 
Registration for CPM 
Paper # CPM2007-117 
Volume (vol) vol.107 
Number (no) no.325 
Page pp.65-68 
#Pages 4 
Date of Issue 2007-11-09 (CPM) 

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