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Paper Abstract and Keywords
Presentation 2007-11-17 15:05
MBE growth and low-temperature thermal annealing of ferromagnetic semiconductor (Ga,Mn)As/Zn-doped-GaAs superlattice structures
Hisayuki Nakagawa, Joel T. Asubar, Yoshio Jinbo, Naotaka Uchitomi (Nagaoka Univ. of Tech.) CPM2007-126
Abstract (in Japanese) (See Japanese page) 
(in English) We prepared the superlattice (SL) structure of ferromagnetic semiconductor (Ga,Mn)As and p-type GaAs spacer layer by MBE, and investigated its structural, electrical, and magnetic properties. Furthermore, we investigated the effect of low-temperature thermal annealing on properties of these stuructures. According to the RHEED pattern observation and HRXRD results, the samples prepared are of good crystalline quality. Ferromagnetic transition temperature Tc of as-grown sample is estimated to be 50K using SQUID magnetometer. From the HRXRD results, (004) diffraction patterns of SL structure is shifted to higher angle by annealing, which suggest decreasing lattice constant with Mn interstitial atoms out-diffusion.
Keyword (in Japanese) (See Japanese page) 
(in English) (Ga,Mn)As / ferromagnetic semiconductor / superlattice / low-temperature thermal annealing / / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 325, CPM2007-126, pp. 109-113, Nov. 2007.
Paper # CPM2007-126 
Date of Issue 2007-11-09 (CPM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF CPM2007-126

Conference Information
Committee CPM  
Conference Date 2007-11-16 - 2007-11-17 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagaoka University of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process of Thin Film formation and Materials, etc. 
Paper Information
Registration To CPM 
Conference Code 2007-11-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) MBE growth and low-temperature thermal annealing of ferromagnetic semiconductor (Ga,Mn)As/Zn-doped-GaAs superlattice structures 
Sub Title (in English)  
Keyword(1) (Ga,Mn)As  
Keyword(2) ferromagnetic semiconductor  
Keyword(3) superlattice  
Keyword(4) low-temperature thermal annealing  
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1st Author's Name Hisayuki Nakagawa  
1st Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. of Tech.)
2nd Author's Name Joel T. Asubar  
2nd Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. of Tech.)
3rd Author's Name Yoshio Jinbo  
3rd Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. of Tech.)
4th Author's Name Naotaka Uchitomi  
4th Author's Affiliation Nagaoka University of Technology (Nagaoka Univ. of Tech.)
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Speaker Author-1 
Date Time 2007-11-17 15:05:00 
Presentation Time 25 minutes 
Registration for CPM 
Paper # CPM2007-126 
Volume (vol) vol.107 
Number (no) no.325 
Page pp.109-113 
#Pages 5 
Date of Issue 2007-11-09 (CPM) 

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