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Paper Abstract and Keywords
Presentation 2007-11-27 13:55
Fabrication of ultrafast InP-based HEMTs for MMIC application
Issei Watanabe, Akira Endoh (NICT), Takashi Mimura (Fujitsu Labs.), Toshiaki Matsui (NICT) ED2007-188
Abstract (in Japanese) (See Japanese page) 
(in English) InP-based high electron mobility transistors (HEMTs) are the most promising devices not only for future high-speed and high-frequency wireless communications but also expansion of radio spectrum resources in millimeter- (30-300 GHz) and sub-millimeter-wave (300 GHz-3 THz) frequency bands. In this contribution, we introduced a simple, self-aligned one-step-recessed gate procedure to ensure good yield and reliability and low manufacturing costs, but at the same maintain the devices high-speed and high-frequency performance. As the result, we fabricated a 35-nm-gate In0.7Ga0.3As/In0.52Al0.48As HEMT and achieved a transconductance (gm) of 1.7 S/mm, a cutoff frequency (fT) of 520 GHz and a maximum oscillation frequency (fmax) of 425 GHz at room temperature.
Keyword (in Japanese) (See Japanese page) 
(in English) InP-based HEMT / self-aligned one-step-recessed gate / transconductance gm / cutoff frequency fT / maximum oscillation frequency fmax / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 355, ED2007-188, pp. 7-10, Nov. 2007.
Paper # ED2007-188 
Date of Issue 2007-11-20 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2007-188

Conference Information
Committee ED  
Conference Date 2007-11-27 - 2007-11-28 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku Univ. Research Institute of Electrical Communication 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2007-11-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fabrication of ultrafast InP-based HEMTs for MMIC application 
Sub Title (in English)  
Keyword(1) InP-based HEMT  
Keyword(2) self-aligned one-step-recessed gate  
Keyword(3) transconductance gm  
Keyword(4) cutoff frequency fT  
Keyword(5) maximum oscillation frequency fmax  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Issei Watanabe  
1st Author's Affiliation National Institute of Info. & Com. Tech. (NICT)
2nd Author's Name Akira Endoh  
2nd Author's Affiliation National Institute of Info. & Com. Tech. (NICT)
3rd Author's Name Takashi Mimura  
3rd Author's Affiliation Fujitsu Laboratories Limited (Fujitsu Labs.)
4th Author's Name Toshiaki Matsui  
4th Author's Affiliation National Institute of Info. & Com. Tech. (NICT)
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Speaker Author-1 
Date Time 2007-11-27 13:55:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2007-188 
Volume (vol) vol.107 
Number (no) no.355 
Page pp.7-10 
#Pages 4 
Date of Issue 2007-11-20 (ED) 

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