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Paper Abstract and Keywords
Presentation 2007-12-14 13:30
In-situ Measurement of Temperature Variation in Si wafer During Millisecond Rapid Thermal Annealing
Hirokazu Furukawa, Seiichiro Higashi, Tatsuya Okada, Hirotaka Kaku, Hideki Murakami, Seiichi Miyazaki (Hiroshima Univ.) SDM2007-228
Abstract (in Japanese) (See Japanese page) 
(in English) In-situ measurement technique of temperature profile in Si wafer during millisecond rapid thermal annealing has been developed. By analyzing the oscillation observed in transient reflectivity during the annealing, we obtain the transient temperature profile with millisecond time resolution. Since this measurement is based on optical interference, highly sensitive temperature measurement with an accuracy of 2 K is expected. Based on the measurement technique, Si wafer surface temperature during thermal plasma jet irradiation has controlled with the heating and cooling rates in the order of 104 ~ 105 K/s.
Keyword (in Japanese) (See Japanese page) 
(in English) Si wafer / millisecond rapid thermal annealing / in-situ measurement / non-contact measurement / / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 388, SDM2007-228, pp. 27-29, Dec. 2007.
Paper # SDM2007-228 
Date of Issue 2007-12-07 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2007-12-14 - 2007-12-14 
Place (in Japanese) (See Japanese page) 
Place (in English) Nara Institute Science and Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Silicon related material, process and device 
Paper Information
Registration To SDM 
Conference Code 2007-12-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) In-situ Measurement of Temperature Variation in Si wafer During Millisecond Rapid Thermal Annealing 
Sub Title (in English)  
Keyword(1) Si wafer  
Keyword(2) millisecond rapid thermal annealing  
Keyword(3) in-situ measurement  
Keyword(4) non-contact measurement  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Hirokazu Furukawa  
1st Author's Affiliation Graduate School of Advanced Sciences of Matter, Hiroshima University (Hiroshima Univ.)
2nd Author's Name Seiichiro Higashi  
2nd Author's Affiliation Graduate School of Advanced Sciences of Matter, Hiroshima University (Hiroshima Univ.)
3rd Author's Name Tatsuya Okada  
3rd Author's Affiliation Graduate School of Advanced Sciences of Matter, Hiroshima University (Hiroshima Univ.)
4th Author's Name Hirotaka Kaku  
4th Author's Affiliation Graduate School of Advanced Sciences of Matter, Hiroshima University (Hiroshima Univ.)
5th Author's Name Hideki Murakami  
5th Author's Affiliation Graduate School of Advanced Sciences of Matter, Hiroshima University (Hiroshima Univ.)
6th Author's Name Seiichi Miyazaki  
6th Author's Affiliation Graduate School of Advanced Sciences of Matter, Hiroshima University (Hiroshima Univ.)
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Speaker Author-1 
Date Time 2007-12-14 13:30:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2007-228 
Volume (vol) vol.107 
Number (no) no.388 
Page pp.27-29 
#Pages 3 
Date of Issue 2007-12-07 (SDM) 

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