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Paper Abstract and Keywords
Presentation 2007-12-14 15:10
Interface modification by NH3 plasma in SiNx passivation for solar cell
Yuki Kishiyama, Yu Takahashi, Akiyoshi Ogane, Athapol Kitiyanan, Yukiharu Uraoka, Takashi Fuyuki (NAIST) SDM2007-232
Abstract (in Japanese) (See Japanese page) 
(in English) The effect of NH3 plasma treatment on p-type (Fz) Si substrates was investigated relating with the post annealing process. NH3 plasma treatment before the low temperature deposition of silicon nitride (SiNx) by plasma-enhanced chemical vapor deposition (PECVD) was found to be effective to improve the surface passivation. The effective lifetime with NH3 plasma-treatment exceeded the effective lifetime without the NH3 treatment. For fire through process and the new process, like laser fired contacts (LFC), thermal resistance of passivation processes investigated. In the result of NH3 plasma-treatment, outstanding surface passivation for high efficiency thin silicon solar cells was obtained using SiN films deposited at low temperatures.
Keyword (in Japanese) (See Japanese page) 
(in English) Solar cell / SiNx / Passivation / NH3 plasma treatment / / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 388, SDM2007-232, pp. 43-46, Dec. 2007.
Paper # SDM2007-232 
Date of Issue 2007-12-07 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2007-232

Conference Information
Committee SDM  
Conference Date 2007-12-14 - 2007-12-14 
Place (in Japanese) (See Japanese page) 
Place (in English) Nara Institute Science and Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Silicon related material, process and device 
Paper Information
Registration To SDM 
Conference Code 2007-12-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Interface modification by NH3 plasma in SiNx passivation for solar cell 
Sub Title (in English)  
Keyword(1) Solar cell  
Keyword(2) SiNx  
Keyword(3) Passivation  
Keyword(4) NH3 plasma treatment  
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1st Author's Name Yuki Kishiyama  
1st Author's Affiliation Nara Institute of Science and Technology (NAIST)
2nd Author's Name Yu Takahashi  
2nd Author's Affiliation Nara Institute of Science and Technology (NAIST)
3rd Author's Name Akiyoshi Ogane  
3rd Author's Affiliation Nara Institute of Science and Technology (NAIST)
4th Author's Name Athapol Kitiyanan  
4th Author's Affiliation Nara Institute of Science and Technology (NAIST)
5th Author's Name Yukiharu Uraoka  
5th Author's Affiliation Nara Institute of Science and Technology (NAIST)
6th Author's Name Takashi Fuyuki  
6th Author's Affiliation Nara Institute of Science and Technology (NAIST)
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Speaker Author-1 
Date Time 2007-12-14 15:10:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2007-232 
Volume (vol) vol.107 
Number (no) no.388 
Page pp.43-46 
#Pages 4 
Date of Issue 2007-12-07 (SDM) 

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